Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps

Grill, A.; Edelstein, D.; Lane, Michael; Patel, V.; Gates, S. M.; Restaino, D.; Molis, S.

doi:10.1063/1.2844483

Cited by 44 publications

(27 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12,13 Nanoporous OSG capped with a SiCN diffusion barrier constitutes an important model system for future generations of microelectronic devices. 20 To the best of our knowledge, an integrated study of this material system focusing on water diffusion and its impact on fracture is yet to be conducted. In this study, we first characterize the effect of water exposure on the fracture behavior of the OSG and the OSG/SiCN interface.…”

Section: Introductionmentioning

confidence: 99%

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Tsui

Vlassak

2009

Journal of Applied Physics

View full text Add to dashboard Cite

The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters. Abstract -Among various low-dielectric constant ('low-k') materials under development, organosilicate glasses (OSG) containing nanometer-size pores are leading candidates for use as intra-metal dielectrics in future microelectronics technologies. In this paper, we investigate the direct impact of water diffusion on the fracture behavior of film stacks that contain porous OSG coatings. We demonstrate that exposure of the film stacks to water causes significant degradation of the interfacial adhesion energy, but that it has negligible effect on the cohesive fracture energy of the nanoporous OSG layer. Isotope tracer diffusion experiments combined with dynamic secondary ion mass spectroscopy (SIMS) show that water diffuses predominantly along the interfaces, and not through the porous films. This unexpected result is attributed to the hydrophilic character of the interfaces.

show abstract

Section: Introductionmentioning

confidence: 99%

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Tsui

Vlassak

2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…However, it was also acknowledged that the convergence of increasing porosity and decreasing device feature sizes would ultimately lead to severe integration issues for dielectric insulators with k < 2.7. [3][4][5][6] The resulting structural changes in both density and networkconnectivity (as compared to SiO 2 ) negatively impacted the mechanical properties of the porous low-k materials, [7][8][9][10][11][12][13] leading in some cases to drastic failure during chip packaging.…”

mentioning

confidence: 99%

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Lionti

Volksen

Magbitang

et al. 2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The increasing sensitivity of porous low dielectric constant materials to process damage constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring structures for advanced technology nodes. In the early 2000s and in anticipation to future low-k related integration challenges, the semiconductor industry started to investigate the possibility to repair or prevent this damage. It is remarkable that the most disruptive solutions proposed today are inspired from the work initiated more than 10 years ago. In this review we first describe the accepted mechanisms for plasma damage, followed by a quick summary of the methods used to quantify its extent on both blanket films and patterned structures. We then report on the past and current strategies developed to mitigate the plasma damage of porous, low-k materials during damascene integration processes.

show abstract

“…Besides the location of the crack stop, the fracture resistance of the crack stop structure and low-k dielectrics is also important: more resistance means less susceptibility to fracture and larger process margin. In addition, several other techniques have been proposed to improve the mechanical reliability of low-k interconnect including optimization of the dicing process [24] and repair of dicing defects based on chemical reaction [25].…”

Section: B Implementation Of Crack Stop Structurementioning

confidence: 99%

Chip–Package Interaction and Reliability Improvement by Structure Optimization for Ultralow-$k$ Interconnects in Flip-Chip Packages

Zhang

Wang

et al. 2012

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

Mechanical failures in low-k interlayer dielectrics and related interfaces during flip-chip-packaging processes have raised serious reliability concerns. The problem can be traced to interfacial fracture induced by chip-package interaction (CPI). During the packaging processes, thermal stresses arise from the mismatch in coefficient of thermal expansion between the chip and the substrate, which can be directly coupled into the Cu/low-k interconnect structure to drive interfacial delamination. In this paper, finite-element method is used to evaluate the crack driving force induced by CPI and to examine its impact on the reliability of Cu/low-k interconnects for 45-nm technology and beyond. First, the characteristics of CPI are investigated for flip-chip packages using a 3-D multilevel global-to-local modeling method where the crack driving force for the interfacial delamination in Cu/low-k interconnect structures is evaluated. The effects of dielectric and packaging materials are examined for different low-k dielectrics and Pb-based and Pb-free solders. This study is then extended to explore the potential of using structural optimizations to improve the CPI reliability as the technology continues with dimensional scaling and implementation of porous ultralow-k materials.Index Terms-Chip-package interaction (CPI), crack stop, Cu/low-k interconnect reliability, finite-element method, low-k dielectric.

show abstract

Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps

Cited by 44 publications

References 2 publications

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Chip–Package Interaction and Reliability Improvement by Structure Optimization for Ultralow-$k$ Interconnects in Flip-Chip Packages

Contact Info

Product

Resources

About