Interface effects on the magnetoelectric properties of (0 0l)-oriented Pb(Zr0.5Ti0.5)O3/CoFe2O4 multilayer thin films

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3film grown on Ni foil

“…[8][9][10][11] Among the piezoelectric/magnetostrictive constituents available for fabricating an ME heterostructure, the combination of Pb(Zr,Ti)O 3 (PZT) and Ni is an attractive option, as PZT has high piezoelectric response and Ni is an inexpensive and widely available magnetostrictive base metal. Further, the similar mechanical impedances of PZT (25)(26)(27)(28)(29)(30) efficient strain transfer across the PZT/Ni interface. This, in turn, should produce strong ME coupling in PZT/Ni composites.…”

“…A comparison of the α ME values of various reported ME composites relevant to this work is shown in Table S1 of the supplementary material. [13][14][15][24][25][26][27]30 The α ME obtained from the (001) oriented PZT film on the Ni foil significantly outperforms that of all the ME film composites based on either PZT/Ni or textured PZT films deposited on magnetostrictive oxide substrates. The high piezoelectric response and the low dielectric constant, due to the strong texturing of the PZT grains and their domain state, presumably contributed to the larger ME output, since α ME ∝ g ij (=d ij /ε ij ), where ε ij is dielectric permittivity and g ij and d ij are piezoelectric voltage and charge coefficients, respectively.…”

“…[20][21][22][23] Although there have been some efforts to synthesize textured PZT films on magnetostrictive oxide substrates, which showed poor ME outputs, fabrication of ME composites with oriented PZT films on Ni has been rarely reported. [24][25][26][27] In this context, the present work is directed towards development of a high-performance PZT/Ni magnetoelectric film heterostructure. The large α ME of 3.2 V/cm·Oe obtained from a (001) oriented PZT film on the Ni foil is found be the best reported to date for ME film composites based on either PZT/Ni or textured PZT films on magnetostrictive oxide substrates.…”

“…The crystallization interfaces are a consequence of multiple spin-coating and RTA steps which induce direct epitaxial growth of a new layer on top of a pre-existing crystallized layer. 25,27 Mechanical characterization of the PZT/Ni heterostructure was conducted through bending test of the sample to estimate its structural integrity. The quality of interfacial bonding was gauged by observing the surface microstructure of the PZT film under bending strains of 0.19% and 0.29% applied to the PZT/Ni composite (see Fig.…”

“…The square hysteresis loop and remanent polarization of the (001) PZT film on the flexible Ni foil are observed to be much better compared to those reported for the (001) PZT films deposited on rigid magnetostrictive oxide substrates and suggest a large piezoelectric response. [24][25][26][27] The large c-domain population in the PZT film on Ni could be due to a combination of the compressive stress induced by the thermal expansion mismatch between PZT and Ni and the relaxation of stress by bending of the thin foil structure. 4,5,22,29 The ME response of the PZT/Ni composite corona poled at different DC voltages is shown in Fig.…”