Interface-Driven Multifunctionality in Two-Dimensional TiO₂ Nanosheet/Poly(Dimercaptothiadiazole-Triazine) Hybrid Resistive Random Access Memory Device

Abstract

Interface-driven multifunctional facets are gearing up in the field of science and technology. Here, we present the interface-activated resistive switching (RS), negative differential resistance, diode behavior, and ultraviolet (UV) light sensing in nanosheet-based hybrid devices. A hybrid device i.e., titanium dioxide nanosheet (TiO 2 -NS)/poly(dimercaptothiadiazoletriazine)[Poly(DMcT-CC)] is fabricated by spin coating Poly-(DMcT-CC) polymer on hydrothermally as-grown TiO 2 -NS. The pristine devices of both materials show either small or no magnitude of RS, but the hybrid device shows highly enhanced RS of nearly four orders due to the formation of a p−n junction at the NS/polymer interface. The resistive random access memory feature appears to be more prominent in the hybrid device i.e., high and low current states are found to be stable in repetitive cycles since the interface acts as a trapping center for the carriers. The UV sensing ability of the hybrid device has been demonstrated by a threefold increment in a current at 60 mV. The impedance spectroscopy has been employed to show that the multifunctional features are directly associated to the NS/polymer interface, which deduce that the manipulation of such interfaces can pave the way for developing the hybrid structures.

Synthesis of Intrinsically Dual-Emissive Aliphatic Conducting Polymer and ESIPT-Associated Switching of Amide-Aggregate to Imidol-Aggregate for Sensing of Cr(III) and Fe(III)

“…The conductivities and impedances of FCP4 were investigated by measuring I – V in the range of −2.0 to +2.0 V and frequency within 10 –4 –2.0 MHz, respectively, at pH = 7.0 and 8.0 (Scheme and Figure ). In FCP4 (at pH = 7.0), the non-Ohmic nature of the I – V curve was ascribed to the origin of large local fields from different types of FCP4- aggregates (Figure a). − In FCP4 , the facilitated proton conduction was ascribed to the presence of vicinal −COOH groups; water–proton bridges; hydrophilic regions of dipoles; and conventional/nonconventional hydrogen bonds of −COOH, −CH 2 OH/–CONH, and −CON, supported by ESP, RDG, and DFT studies (Figures a,b, S5f,h, S8a,c, S9a,c, and S23a,c,e,g and Tables S4, S5, S11, and S12). − In FCP4 , −CONH and −CON groups of MMA and NMMAPA, respectively, further assisted the proton transport by accepting a proton from the neighboring groups.…”

Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM

“…An ohmic conductive behavior with a slope of unit one was presented in LRS exhibits due to the formation of CFs in the device during the SET process [11,12]. Fitting HRS's results show that the charge transport behavior accords with the space charge limited conduction (SCLC), which is composed of the ohmic region and the nonlinear region [11,29,43]. As compared to previous papers [44][45][46], we can propose that Ag/VO 2 (B)/SiO x /n ++ Si (Device A) conforms to the electrochemical metallization mechanism, that is, the formation of the silver conducting filament in Device A [11].…”

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

“…Kumari et al prepared composite devices by hydrothermally growing titanium dioxide nanosheet (TiO 2 -NS) on FTO substrates and spin-coating polymers on FTO substrates [ 76 ]. The modified nanosheets exhibited attractive properties, such as worm/RRAM and modified diodes.…”