Interface dipole for remarkable efficiency enhancement in all-solution-processable transparent inverted quantum dot light-emitting diodes

Chen, Lixiang; Lee, Min Hsuan; Wang, Yiwen; Lau, Ying Suet; Syed, Ali Asgher; Zhu, Furong

doi:10.1039/c8tc00303c

Cited by 29 publications

(33 citation statements)

References 41 publications

(36 reference statements)

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“…The ITO surface was modified by an ultrathin PFN-Br layer, prepared by spin coating at a rotation speed of 3000 rpm for 50 s followed by annealing at 90°C for 10 min. The use of PFN-Br-modified ITO anode is to create an interface dipole (25), assisting in bidirectional tunneling hole injection in the PM OPD. Then, a 300-nm-thick binary blend layer of P3HT: PC 70 BM (100:1) was deposited on the PFN-Br-modified ITO/glass substrates by spin coating at a rotation speed of 400 rpm for 100 s and annealing at 80°C for 20 s. A 320-nm-thick pristine P3HT optical spacer and a 500-nm-thick ternary blend layer of P3HT:PTB7-Th: PC 70 BM (70:30:1) were first coated on the precleaned silicon (Si) wafers, respectively.…”

Section: Device Fabricationmentioning

confidence: 99%

Near-infrared and visible light dual-mode organic photodetectors

et al. 2020

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We report a dual-mode organic photodetector (OPD) that has a trilayer visible light absorber/optical spacer/near-infrared (NIR) light absorber configuration. In the presence of NIR light, photocurrent is produced in the NIR light–absorbing layer due to the trap-assisted charge injection at the organic/cathode interface at a reverse bias. In the presence of visible light, photocurrent is produced in the visible light–absorbing layer, enabled by the trap-assisted charge injection at the anode/organic interface at a forward bias. A high responsivity of >10 A/W is obtained in both short and long wavelengths. The dual-mode OPD exhibits an NIR light response operated at a reverse bias and a visible light response operated at a forward bias, with a high specific detectivity of ~1013 Jones in both NIR and visible light ranges. A bias-switchable spectral response OPD offers an attractive option for applications in environmental pollution detection, bioimaging process, wellness, and security monitoring in two distinct bands.

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Section: Device Fabricationmentioning

confidence: 99%

Near-infrared and visible light dual-mode organic photodetectors

et al. 2020

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“…Notably, the conducting polymer counter electrode showed comparable device efficiency with the Pt counter electrode. In the past few years, a dozen of research groups reported high PCEs of >10% for ST-OSCs by using simple ultrathin metal top electrodes, which were attributed to the remarkable achievements of highly efficient narrow-bandgap polymer donors and Efficiency 67 cd A −1 [135] 72.4% [219]a) 15.3% [115] 2.7 cd A −1 [233] -2.2 cd A −1 [122,123] 14.3% [126] T-QLEDS AVT 84% 45% -----Efficiency 10.63% [244] 1.79 cd A −1 [247] 1.55 cd A −1 [249] ---0.19% [251] T-PeLEDs AVT -47.2% -----Efficiency -1.21% [252] -----ST-DSSCs AVT ----80% b) --PCE -6% [264] 3.6% [259] 6.54% [271] 9.1% [268] --ST-OSCs AVT 34% 30% 40% --60% b) 40% PCE 4% [297] 10.02% [304] 8.02% [298] 2.7% [174,175] -4.1% [317] 3.4% [321] ST-PeSCs AVT -22% -7.3% --20% PCE 16.3% [322] 13.6% [327] 11.07% [338] 10.1% [340] -9.9% [341] 12% [342] a)…”

Section: Discussionmentioning

confidence: 99%

“…Reproduced with permission. [ 249 ] Copyright 2018, The Royal Society of Chemistry. e) Schematic fabrication process, the current efficiency–voltage–EQE characteristics for T‐QLED with a laminated graphene anode.…”

Section: Transparent Light‐emitting Diodesmentioning

confidence: 99%

“…Elsewhere, Zhu and co‐workers fabricated high‐performance full‐solution processed inverted T‐QLEDs by constructing an interface dipole between the ETL and light‐emitting layer (Figure 8d). [ 249 ] This interface dipole was formed through the electrostatic interaction between N + groups in the polar conjugated polyelectrolyte of poly[(9,9‐bis(3′‐(( N , N ‐dimethyl)‐ N ‐ethylammonium)‐propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluoren)] dibromide (PFN‐Br) and the hydroxyl (OH − ) groups on the ZnO surface. Consequently, the energy barrier at the ETL/QD interlayer was reduced, this prevented the exciton quenching through suppressing the ZnO surface defects.…”

Section: Transparent Light‐emitting Diodesmentioning

confidence: 99%

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Toward See‐Through Optoelectronics: Transparent Light‐Emitting Diodes and Solar Cells

Liu

Cao

Chen

et al. 2020

Advanced Optical Materials

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of numerous applications exceeding the current technologies in the foreseeable future. For instance, lighting and display based on LEDs will be transparent, which can be applied in see-through displays, augmented reality/virtual reality headmounted displays, car head-up windshield displays, and smart windows in architectures. Semitransparent solar cells are considered the most promising energy harvesting systems to replace conventional building materials, such as roofing, skylights, curtain walls, facades, and other building envelopes. Traditional LEDs and solar cells are opaque, resulting from the top electrodes, which are typically fabricated with highly reflective metal films (Al, Au, Ag or Pt) to ensure the reflection of light back to the device (Figure 1a). The past three decades have witnessed a remarkable development of new-generation highly efficient LEDs and solar cells (Figure 1b,c). Next-generation flat-panel displays, including organic light-emitting diodes (OLEDs), quantumdot light-emitting diodes (QLEDs), and perovskite light-emitting diodes (PeLEDs), are attracting extensive attention due to the fascinating features, such as self-luminance, tunable emission spectra, wide color gamut, less power consumption, and extraordinary mechanical flexibility. [1-5] Efficiency is one of the most vital performance parameters in the whole electrical light sources, which determines the power consumption. For LEDs, external quantum efficiency (EQE) is regarded as the most representative efficiency term defined as the ratio of emitted photons over injected charge carriers. As shown in Figure 1b, the peak EQE of OLEDs is as high as 40%, with luminous power efficiency of over 100 lm W −1 (without any light extraction structure), which has surpassed most fluorescent lamps (60-90 lm W −1). [6-29] Notably, OLEDs have been the mainstream display in mobile phones due to the remarkable efficiency enhancement in the last three decades. Since 1994, colloidal quantum-dots (QDs) have shown the potential for use in thin-film display due to the high luminous efficiency and special size-tunable color. [30-32] As shown in Figure 1b, a peak EQE value of 22.9% has been achieved for QLEDs. [33-46] Moreover, perovskite is a new family of optoelectronic materials. [47,48] Recent reports have found that metal halide perovskites are one of the most promising light-emitting materials owing to the high charge-carrier mobility, high photoluminescence quantum yield narrow photoluminescent peaks, Transparent light-emitting diodes (LEDs) and solar cells have attracted extensive attention as the most promising optoelectronic devices surpassing conventional opaque displays and photovoltaics. These transparent devices are particularly suitable for special applications including seethrough display and building-integrated photovoltaics, for example, headmounted displays, navigation displays on car windshields, smart windows, roofing, skylights, and facades. This review systematically evaluates the pros and cons of representative transparent conduct...

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“…The emissive layer is a key component of light‐emitting devices, as it determines the electroluminescence (EL) performance (i.e., brightness, device efficiency, and color of emitted light (i.e., EL spectra)) of the device. Various emissive materials such as organic materials, [ 102–111 ] QDs, [ 15–17,112–116 ] and perovskite materials [ 117–120 ] have been employed for the fabrication of transparent light‐emitting diodes (LEDs) to acquire highly vivid colors with excellent brightness. Figure a,b compares the color characteristics of previously reported transparent LEDs with regard to the color gamut of the Commission internationale de l'éclairage (CIE) 1931 color coordinates and FWHMs of the EL spectra, respectively.…”

Section: Next‐generation Display Technologies For Extended Realitymentioning

confidence: 99%

Unconventional Image‐Sensing and Light‐Emitting Devices for Extended Reality

Park

Seung

Kim

et al. 2021

Adv Funct Materials

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Extended reality (XR) refers to a space where physical and digital elements coexist and comprises three elements, namely, environment, human, and computer, which interact with each other. Image sensors and displays are the core elements of XR systems because visual information is important for recognizing and judging objects. Recently, new features of image sensors and displays that are useful for developing next‐generation XR systems have been reported. For example, a miniaturized version of image sensors with the superb object detection and recognition capability offers new opportunities for machine vision technology. Furthermore, transparent and deformable displays are the key components of XR systems because they not only provide highly realistic virtual image information but also serve as efficient user interfaces. Herein, the recent progresses in such unconventional image sensors and display technologies are reviewed. First, image sensors with features of wavelength‐selective photodetection for color discrimination, neuromorphic image acquisition for facile pattern recognition, and curved image sensor designs inspired by biological eyes for miniaturization and unconventional imaging performances are discussed. Then, light‐emitting device technologies focusing on devices with transparency and deformable form factors are described. Finally, the review is concluded with a brief summary and a future outlook.

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Interface dipole for remarkable efficiency enhancement in all-solution-processable transparent inverted quantum dot light-emitting diodes

Abstract: We report our efforts to develop high performing all-solution-processable transparent inverted QD-LEDs by interposing an interface dipole between the ZnO ETL and the quantum dot light-emitting layer.

Cited by 29 publications

References 41 publications

Near-infrared and visible light dual-mode organic photodetectors

Near-infrared and visible light dual-mode organic photodetectors

Toward See‐Through Optoelectronics: Transparent Light‐Emitting Diodes and Solar Cells

Unconventional Image‐Sensing and Light‐Emitting Devices for Extended Reality

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