Interface design for the transport properties in asymmetric two-dimensional van der Waals multiferroic tunnel junctions

Hu, Huamin; Xu, Degao; Ouyang, Gang

doi:10.1016/j.physe.2022.115501

Cited by 5 publications

(2 citation statements)

References 49 publications

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“…In contrast, following positive gate polarization, E FE is directed away from the interface (Figure f-4), with a consequent downshift of E F deeper into the valence band, resulting in a low resistance “on” state (logic “1”). A similar polarization-induced Fermi energy shift and barrier modulation (ΔΦ B ) in graphene were reported theoretically (e.g., ΔΦ B ≈ 0.95 eV for Sc 2 CO 2 /Gr and for Gr-α-In 2 Se 3 ) and experimentally (e.g., ΔΦ B ≈ 1 eV for CIPS/Gr).…”

Section: Resultssupporting

confidence: 83%

Graphene-In₂Se₃ van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

Mukherjee,

Dutta,

Ghosh

et al. 2023

ACS Nano

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Functional diversification at the single-device level has become essential for emerging optical neural network (ONN) development. Stable ferroelectricity harnessed with strong light sensitivity in α-In 2 Se 3 holds great potential for developing ultrathin neuromorphic devices. Herein, we demonstrated an all-2D van der Waals heterostructure-based programmable synaptic field effect transistor (FET) utilizing a ferroelectric α-In 2 Se 3 nanosheet and monolayer graphene. The devices exhibited reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by multiple dual-mode (optical and electrical) stimuli and thereby used to realize energy-efficient, heterosynaptic functionalities in a biorealistic fashion. Furthermore, under light illumination, the prototypical device can toggle between volatile (photodetector) and nonvolatile optical random-access memory (ORAM) logic operation, depending upon the ferroelectric-dipole induced band adjustment. Finally, plasticity modulation from short-term to prominent long-term characteristics over a wide dynamic range was demonstrated. The inherent operation mechanism owing to the switchable polarization-induced electronic band alignment and bidirectional barrier height modulation at the heterointerface was revealed by conjugated electronic transport and Kelvin-probe force microscopy (KPFM) measurements. Overall, robust (opto)electronic weight controllability for integrated in-sensor and in-memory logic processors and multibit ORAM systems was readily accomplished by the synergistic ferrophotonic heterostructure properties. Our presented results facilitate the technological implementation of versatile all-2D heterosynapses for next-generation perception, optoelectronic logic systems, and Internet-of-Things (IoT) entities.

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Section: Resultssupporting

confidence: 83%

Graphene-In₂Se₃ van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

Mukherjee,

Dutta,

Ghosh

et al. 2023

ACS Nano

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“…By combining 2D ferroelectric materials with other 2D materials to form a vdWH, the electronic transport properties of ferroelectric materials can be further regulated. [36][37][38] Hu et al have achieved an enhanced p-type Schottky contact and n-type Ohmic contact in a-In 2 Se 3 / 1T-MnSe 2 vdWHs via manipulating the ferroelectric polarization of a-In 2 Se 3 . 37 Liu et al studied the a-In 2 Se 3 /SnTe(PbSe) vdWHs 39 and realized an OFF/ON resistance ratio exceeding 1 Â 10 4 .…”

Section: Introductionmentioning

confidence: 99%

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures

Lei,

Zhou,

Zheng

et al. 2024

Phys. Chem. Chem. Phys.

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Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M = Cr, Mo, W) heterostructure: Insights from first-principles

Yao,

Yun,

Kang

et al. 2024

Applied Surface Science

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Interface design for the transport properties in asymmetric two-dimensional van der Waals multiferroic tunnel junctions

Cited by 5 publications

References 49 publications

Graphene-In₂Se₃ van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

Graphene-In₂Se₃ van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures

Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M = Cr, Mo, W) heterostructure: Insights from first-principles

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Interface design for the transport properties in asymmetric two-dimensional van der Waals multiferroic tunnel junctions

Cited by 5 publications

References 49 publications

Graphene-In2Se3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

Graphene-In2Se3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In2Se3/MoTe2 van der Waals heterostructures

Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M = Cr, Mo, W) heterostructure: Insights from first-principles

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Product

Resources

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Graphene-In₂Se₃ van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

Graphene-In₂Se₃ van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures