Interface Defects in GIGS-based Solar Cells from Coupled Electrical and Chemical Points of View

Canava, B.; Vigneron, Jackie; Etchéberry, Arnaud; Hamady, Sidi Ould Saad; Djebbour, Zakaria; Mencaraglia, Denis; Guillemoles, J.-F.; Lincot, Daniel

doi:10.1557/proc-668-h5.2

Cited by 3 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 Several methods of CIGS deposition based on vacuum techniques such as multi-step physical vapour deposition and conventional sputtering techniques have been developed. [5][6][7][8][9][10] The bottleneck in the production of CIGS thin film solar cells as a renewable energy source is formed by a combination of their high manufacturing cost, difficulty in scaling up the manufacturing process due to the limited size of the vacuum chambers used for depositing these films, and difficulty in the control on the formation of stoichiometric films. Due to the relatively high vapour pressure of selenium, even at moderately elevated temperatures, as-deposited CIGS films often do not contain the proper stoichiometric amount of selenium.…”

Section: Introductionmentioning

confidence: 99%

One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells

Harati

Jia

Giffard

et al. 2010

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn(1-x)Ga(x)Se(2) (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated.

show abstract

Section: Introductionmentioning

confidence: 99%

One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells

Harati

Jia

Giffard

et al. 2010

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…The action of these two treatments allowed to improve strongly solar cells efficiencies. The evolution of superficial chemistry, morphology and surface roughness was already studied [7,8] by XPS, mechanical profilometry and Scanning Electron Microscopy (SEM) measurements before and after KCN chemical treatment. Below, we focus on the properties of solar cells made using this double stage, chemical preparation.…”

Section: Introductionmentioning

confidence: 99%

Increasing solar cell efficiencies based on Cu(In,Ga)Se ₂ after a specific chemical and oxidant treatment

Canava

Roussel

Guillemoles

et al. 2006

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

Oxidative etching treatments based on bromine water mixtures have been studied on polycrystalline thin films of Cu(In,Ga)Se 2 . This treatment enables preparation of planar, smooth and specular surfaces whose chemical properties are well defined, despite the small thickness of the layers (≈2 µm). After device completion, the electronic properties (I-V curve, spectral response) were studied and correlated to device performances. Theses conditions allow to re-engineer damaged or aged surfaces of CIGS and to recover high photovoltaic performances.

show abstract

A Review of CIGS Thin Film Semiconductor Deposition via Sputtering and Thermal Evaporation for Solar Cell Applications

Machkih,

Oubaki,

Makha

2024

Coatings

View full text Add to dashboard Cite

Over the last two decades, thin film solar cell technology has made notable progress, presenting a competitive alternative to silicon-based solar counterparts. CIGS (CuIn1−xGaxSe2) solar cells, leveraging the tunable optoelectronic properties of the CIGS absorber layer, currently stand out with the highest power conversion efficiency among second-generation solar cells. Various deposition techniques, such as co-evaporation using Cu, In, Ga, and Se elemental sources, the sequential selenization/sulfidation of sputtered metallic precursors (Cu, In, and Ga), or non-vacuum methods involving the application of specialized inks onto a substrate followed by annealing, can be employed to form CIGS films as light absorbers. While co-evaporation demonstrates exceptional qualities in CIGS thin film production, challenges persist in controlling composition and scaling up the technology. On the other hand, magnetron sputtering techniques show promise in addressing these issues, with ongoing research emphasizing the adoption of simplified and safe manufacturing processes while maintaining high-quality CIGS film production. This review delves into the evolution of CIGS thin films for solar applications, specifically examining their development through physical vapor deposition methods including thermal evaporation and magnetron sputtering. The first section elucidates the structure and characteristics of CIGS-based solar cells, followed by an exploration of the challenges associated with employing solution-based deposition techniques for CIGS fabrication. The second part of this review focuses on the intricacies of controlling the properties of CIGS-absorbing materials deposited via various processes and the subsequent impact on energy conversion performance. This analysis extends to a detailed examination of the deposition processes involved in co-evaporation and magnetron sputtering, encompassing one-stage, two-stage, three-stage, one-step, and two-step methodologies. At the end, this review discusses the prospective next-generation strategies aimed at improving the performance of CIGS-based solar cells. This paper provides an overview of the present research state of CIGS solar cells, with an emphasis on deposition techniques, allowing for a better understanding of the relationship between CIGS thin film properties and solar cell efficiency. Thus, a roadmap for selecting the most appropriate deposition technique is created. By analyzing existing research, this review can assist researchers in this field in identifying gaps, which can then be used as inspiration for future research.

show abstract

Interface Defects in GIGS-based Solar Cells from Coupled Electrical and Chemical Points of View

Cited by 3 publications

References 6 publications

One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells

One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells

Increasing solar cell efficiencies based on Cu(In,Ga)Se ₂ after a specific chemical and oxidant treatment

A Review of CIGS Thin Film Semiconductor Deposition via Sputtering and Thermal Evaporation for Solar Cell Applications

Contact Info

Product

Resources

About

Interface Defects in GIGS-based Solar Cells from Coupled Electrical and Chemical Points of View

Cited by 3 publications

References 6 publications

One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells

One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells

Increasing solar cell efficiencies based on Cu(In,Ga)Se 2 after a specific chemical and oxidant treatment

A Review of CIGS Thin Film Semiconductor Deposition via Sputtering and Thermal Evaporation for Solar Cell Applications

Contact Info

Product

Resources

About

Increasing solar cell efficiencies based on Cu(In,Ga)Se ₂ after a specific chemical and oxidant treatment