Interface conduction and photo-induced electrical transport in the heterojunction formed by GaAs and Ce3+-doped SnO2

Machado, Diego H. O.; Scalvi, Luís Vicente de Andrade; Tabata, A.; Silva, José H. D. da

doi:10.1007/s10854-016-6202-x

Cited by 4 publications

(2 citation statements)

References 36 publications

(42 reference statements)

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“…Besides the Eu 3+ emission that in the heterostructure can be significantly improved [12], previous reports relate that the SnO 2 and GaAs combination in a heterostructure may improve the electrical properties [18][19][20][21]. Then, to acquire knowledge on the application of these devices in optoelectronics, this report focuses on investigation of photo-induced electrical properties of this heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Bueno

Scalvi

2018

Appl. Phys. A

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The decay of photo-induced conductivity is measured for GaAs/SnO 2 heterostructure, after illumination with appropriate wavelength. The top oxide layer is deposited by sol-gel-dip-coating and doped with Eu 3+ , and the GaAs bottom layer is deposited by resistive evaporation. It shows quite unusual behavior since the decay rate gets slower as the temperature is raised. The trapping by intrabandgap defects in the SnO 2 top layer is expected, but a GaAs/SnO 2 interface arrest becomes also evident, mainly for temperatures below 100 K. Concerning the SnO 2 layer, trapping by different defects is possible, due to the observed distinct capture time range. Besides Eu 3+ centers and oxygen vacancies, this sort of heterostructure also leads to Eu 3+ agglomerate areas in the SnO 2 top layer surface, which may contribute for electron scattering. The electrical behavior reported here aims to contribute for the understanding of the electrical transport mechanisms which, combined with emission from Eu 3+ ions from the top layer of the heterostructure, opens new possibilities for optoelectronic devices because samples in the form of films are desirable for circuit integration. The modeling of the photo-induced decay data yields the capture barrier in the range 620-660 meV, and contributes for the defect rules on the electrical properties of this heterostructure.

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Section: Introductionmentioning

confidence: 99%

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Bueno

Scalvi

2018

Appl. Phys. A

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“…The Eu 3+ emission can be significantly facilitated in the heterostructure GaAs/SnO 2 [20], assembly that may also provide electrical properties advances [21][22][23][24]. Then, in order to understand the rule for PL emission on these heterostructure samples, PL is carried out with above SnO 2 bandgap light (energy transfer from the matrix) as well as below bandgap energy, by direct Eu 3+ excitation.…”

Section: Introductionmentioning

confidence: 99%

X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

et al. 2020

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X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO 2. XANES data are used for analyzing the local organization around Eu in the heterostructure formed by GaAs and Eu-doped SnO 2. The differences between the XANES data for these samples and data obtained for Eu-doped SnO 2 thin films, deposited on glass substrate, are assumed as responsible for the differences in the photoluminescence (PL) spectra concerning the Eu 3+ emission, since films deposited on glass substrate do not present Eu 3+ PL transitions until the annealing temperature is rather high. Eu 3+ emission is explored using two different excitation sources: 350 nm from a Kr + laser (above SnO 2 energy bandgap) and 488 nm from an Ar + laser (below SnO 2 bandgap energy). The existence of more organized regions around the Eu 3+ site observed for the heterostructure surface may be associated with the Eu 3+ luminescent emission. The main and secondary features in the XANES show that there are differences in the average local Eu environment for the SnO 2 :Eu isolated thin films and heterostructures, being more organized in the latter. Electrical characterization evidences that the portion of the resistivity reduction that corresponds to photo-ionized intrabandgap states is responsible for the persistent photoconductivity phenomenon in the heterostructures.

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Dipole behavior in thin film heterostructure composed of Er-doped SnO2 and GaAs: Influence of polarization bias, temperature and stray light

2023

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Interface conduction and photo-induced electrical transport in the heterojunction formed by GaAs and Ce3+-doped SnO2

Cited by 4 publications

References 36 publications

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

Dipole behavior in thin film heterostructure composed of Er-doped SnO2 and GaAs: Influence of polarization bias, temperature and stray light

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