Interface composition and stacking fault density in II-VI/III-V heterostructures

Abstract

Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In 0.04 Ga 0.96 As (001) heterojunctions J.

Zn 0.85 Cd 0.15 Se active layers on graded-composition InxGa1−xAs buffer layers

“…41,42 The dramatically enhanced optical quality of Zn 0.85 Cd 0.15 Se epilayers grown on the ternary buffers as compared to those grown on GaAs is illustrated by the PL spectra in Fig. 6, recorded at a sample temperature of 15 K. The topmost spectrum in Fig.…”

Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices

“…The ZnSe buffer layer growth is initiated on a GaAs desorbed surface that has been exposed to a Te flux for about 30 s, and begins with a low Zn:Se BEPR in an attempt to reduce the defect density. 11,12 Under these conditions, RHEED shows a strong ͑2ϫ1͒ reconstruction, typical of Se-rich growth. The Se cell temperature is then continuously reduced during growth to obtain the Zn:Se BEPR recorded in Table I.…”

Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure

“…The relation between the densities of these defects and the chemistry of the ZnSeGaAs interface has been described by Kuo et al (1997) and Heun et al (1997). Sometimes, SF trapezoids containing stair-rod dislocations with b ¼ 1 6 a 0 h101i at the intersection line of two SFs are observed (Wang et al 1997).…”

“…(i) Stacking-fault (SF) pairs, arranged on the (111) and ð 1 1 1 11Þ planes that are bound by Shockley partial dislocations (PDs) with Burgers vector b ¼ 1 6 a 0 h211i (a 0 is the lattice parameter); (ii) SFs on the ð 1 11 1 1Þ or ð1 1 1 1 1Þ planes that are bound by Frank PDs with b ¼ 1 3 a 0 h111i; (iii) SFs that arise from Se precipitates (Tanimura et al 1995, Rosenauer et al 1996, Kuo et al 1997, Heun et al 1997, Wang et al 1997.…”