Interface behaviour evaluation in Au/Cr, Au/Ti and Au/Pd/Ti thin films by means of resistivity and stylus measurements

Audino, R.; Destefanis, G.; Gorgellino, F.; Pollino, Emiliano; Tamagno, S.

doi:10.1016/0040-6090(76)90028-6

Cited by 21 publications

(14 citation statements)

References 4 publications

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“…As it can be observed using scanning electron microscopy, the polysilicon etching was not properly performed at the wafer level (Figure 7a). This could be related to the fact that a non-defined gold layer was deposited because of the well-known bad and weak adherence between gold and silicon [35][36][37], as gold has acted as a mask during the polysilicon dry etching and homogenous edges were necessary to clearly define the devices. After the wafer release the bad adherence of gold over the silicon layer was highly demonstrated, this fact can be seen on figure 7b and c, where the polysilicon and gold layers were completely separated.…”

Section: Polysilicon-gold Chips Fabrication Resultsmentioning

confidence: 99%

“…Polysilicon and gold as device materials were selected because of their high versatility and wellknown orthogonal chemistry. However, the well-known weak adhesion of metallic gold to silicon substrates [35][36][37] limits its use in this type of devices. To circumvent this fabrication issue, a chromium interlayer was selected to be deposited in between, due to its well-known adherent properties and its high resistance to HF-wet etchings.…”

Section: Discussionmentioning

confidence: 99%

“…In addition, gold has been used widely in chemical and biochemical sensors as a signal transducer based on its unique properties [34]. Nevertheless, one of the main issues in the applicability of gold thin films in microfabrication technology is their weak adhesion to silicon substrates [35][36][37]. For this reason, we also consider the deposition of a chromium interlayer between the gold and polysilicon layers, due to its efficient capabilities as a material-adherent [35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, one of the main issues in the applicability of gold thin films in microfabrication technology is their weak adhesion to silicon substrates [35][36][37]. For this reason, we also consider the deposition of a chromium interlayer between the gold and polysilicon layers, due to its efficient capabilities as a material-adherent [35][36][37][38]. Consequently, the intracellular biocompatibility of chromium as such device material should be also evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Technological development of intracellular polysilicon–chromium–gold chips for orthogonal chemical functionalization

Durán¹,

Duch²,

Patiño³

et al. 2015

Sensors and Actuators B: Chemical

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Increasingly, advances in microtechnologies are focused on obtaining new chips intended for applications in fields such as nanomedicine and cell biology, taking advantage of the ability of microelectronics to manufacture devices with cell dimensions and a large variety of features. Here, we report a technology for the fabrication of multi-material chips, using polysilicon and gold as device layers, to be used as bi-functional cellinternalizable devices. In our case, one of the main technological challenges is to overcome the low adherence between these two materials, especially because of their small contact-area, only 9 µm 2. Thus, in order to circumvent this difficulty a chromium adherent-layer was deposited in between. After fabrication, the devices following this design can be successfully internalized inside living macrophages without affecting their viability. The advantage of having multiple material layers in one device is the potential to render multi-tasking chips, as once they are appropriately functionalized, we can provide the chip the ability of being bi-functional. Hence, and as a proof of concept, two different proteins, Wheat Germ Agglutinin (WGA) and Concanavalin (ConA), were 3 immobilized on the chip surface through self-assembled monolayers using orthogonal chemistry. The results of this work show a well-controlled fabrication, the bi-functional capabilities and no cell-toxicity of intracellular polysilicon-chromium-gold chips. These devices have a promising future as intracellular functional platforms for biosensing, drug delivery and diagnosis.

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Section: Polysilicon-gold Chips Fabrication Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Technological development of intracellular polysilicon–chromium–gold chips for orthogonal chemical functionalization

Durán¹,

Duch²,

Patiño³

et al. 2015

Sensors and Actuators B: Chemical

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“…22,[27][28][29][30][31][32][33][34][35] In most of these it is found that Ti reacts with both the substrate and the ambient as well as with Au. 22,[27][28][29][30][31][32][33][34][35] In most of these it is found that Ti reacts with both the substrate and the ambient as well as with Au.…”

Section: Discussionmentioning

confidence: 99%

Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization

Shalish¹,

Shapira²

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Depth profiling by backscattering spectrometry, x-ray photoelectron spectroscopy and diffractometry, scanning electron microscopy, and sheet resistance measurements were used to study the thermal stability of ternary Ti 27 Si 20 N 53 films as diffusion barriers between a gold overlayer and substrates of aluminum nitride, silicon oxide, and ␤-silicon carbide when thin titanium films are added on either side of the barrier to enhance adhesion. It is shown that titanium and gold interdiffuse upon 30 min annealing in vacuum at 400°C and above, which raises the sheet resistance of the gold layer by factors that increase with the amount of titanium present. For the same annealing ambient and duration, nitrogen begins to diffuse at 600°C from the Ti 27 Si 20 N 53 layer into the titanium layer, releasing silicon. This silicon reacts eutectoidally with the gold, leading to breakup of the barrier.

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Resisitivity change in Ti/Au bimetal films annealed in the temperature range 300 to 400 °C

Ling

1983

Phys. Stat. Sol. (a)

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Interface behaviour evaluation in Au/Cr, Au/Ti and Au/Pd/Ti thin films by means of resistivity and stylus measurements

Cited by 21 publications

References 4 publications

Technological development of intracellular polysilicon–chromium–gold chips for orthogonal chemical functionalization

Technological development of intracellular polysilicon–chromium–gold chips for orthogonal chemical functionalization

Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization

Resisitivity change in Ti/Au bimetal films annealed in the temperature range 300 to 400 °C

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