Interface asymmetry in AlN/Ni and Ni/AlN interfaces: A study using resonant soft X-ray reflectivity

Kiranjot,; Dhawan, Rajnish; Gupta, Rajkumar; Yadav, Prabha; Modi, Mohammed H.

doi:10.1016/j.apsusc.2020.147199

Cited by 12 publications

(8 citation statements)

References 20 publications

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“…Structural parameters of Ni/AlN/Ni waveguide [9] are optimized from the EFI calculations using recursive formalism given by de Boer et al [3]. Thickness of all layers are varied to obtain maximum intensity enhancement for TE0 mode inside the AlN guiding layer.…”

Section: Optimization Of Structural Parameters: Electric Field Intens...mentioning

confidence: 99%

“…The slight change in resonant angle occurs due to deviation of structural parameters of the deposited sample from the optimized ones and/or to the uncertainties involved in the measurements. Taking cue from the previous study [9], the XRR data is analyzed using a six-layered model consisting of Ni cladding layers, AlN guiding layer, a surface layer due to oxidation/contamination, an interfacial layer at AlN-on-Ni interface and another interfacial layer at Ni-on-Si interface. Thickness, roughness, and optical densities (δ) of all the layers are varied till satisfactory fit to measured data is obtained using Chi-square minimization procedure.…”

Section: Investigations On Surface-interface Properties Of As Deposit...mentioning

confidence: 99%

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Study of Ni/AlN/Ni waveguide system for 8.05 keV incident energy

Kiranjot

Modi

2022

J. Phys.: Conf. Ser.

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Ni/AlN/Ni waveguide system provides intensity enhancement by a factor of ~30 at 8.05 keV photon energy. In the present study, the effect of deviation of structural parameters (thickness of each layer) along with the surface-interface properties on electric field intensity (EFI) inside an ion beam sputter deposited Ni/AlN/Ni waveguide is investigated. EFI calculations are performed using structural parameters obtained from X-ray reflectivity (XRR) measurements performed using Cu-Kα source. Deposited waveguide structure provides intensity enhancement (~26) slightly lower than optimized value (~30). Furthermore, temporal stability of the structure is investigated using combined XRR and grazing incidence X-ray fluorescence (GIXRF) techniques (at 15 keV photon energy) after about 15 months. Some structural changes are observed which, however, do not lead to further decrease in intensity enhancement inside the waveguide, making it suitable for applications at 8.05 keV photon energy.

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Section: Optimization Of Structural Parameters: Electric Field Intens...mentioning

confidence: 99%

Section: Investigations On Surface-interface Properties Of As Deposit...mentioning

confidence: 99%

Study of Ni/AlN/Ni waveguide system for 8.05 keV incident energy

Kiranjot

Modi

2022

J. Phys.: Conf. Ser.

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“…and interface characterization of multilayered thin film samples having sufficient electron density contrast and thicknesses more than few nanometres. 2,3 In XRR measurements, beam intensity reflected from a sample is measured as a function of grazing incidence angle. As the reflected intensity is proportional to electron density contrast between different layers, therefore, XRR provides electron density versus depth information of layered system in direction perpendicular to the sample surface.…”

Section: X-ray Reflectivity (Xrr) Is a Well-established Technique For Surfacementioning

confidence: 99%

Surface and interface characterization of Ru/C/Ru trilayer structure using grazing incidence X‐ray reflectivity and X‐ray fluorescence

Kiranjot

Dhawan

Modi

2021

Surface & Interface Analysis

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In 8-to 20-keV photon energy region, ruthenium and carbon thin films are used in multilayer monochromators. In the present study, this material combination is explored for X-ray waveguide applications in hard X-ray region. The structural parameters (thickness of each layer) of Ru/C/Ru waveguide structure are optimized to get maximum intensity enhancement of fundamental mode inside carbon guiding layer. A sample with optimized structural parameters is deposited using ion beam sputtering (IBS) technique and characterized using X-ray reflectivity (XRR) and grazing incidence X-ray fluorescence (GIXRF) techniques. The analysis suggests that the density of bottom Ru layer and carbon guiding layer is close to bulk density ($97% for Ru and $95% for carbon), whereas density of top Ru layer is slightly lower ($93% of bulk density). A $10% of thickness variation in top cladding layer along with marginal change in layer density deteriorate field enhancement in TE 0 mode by more than three times. Effect of thickness and density variation on waveguide (Ru [7 nm]/C [18 nm]/Ru [20 nm]) performance is discussed.

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“…A high binding strength between AlN and transition metals is critical to its application as a DPC substrate. Metals such as Ti, Al, Cu, and Zr are often sputtered to serve as interface materials between Cu and ceramic substrates in DPC ceramic substrates [3][4]. Several researchers have investigated the thermal cycle load and delamination failure of AlN substrates through experimental studies.…”

Section: Introductionmentioning

confidence: 99%

Density functional theory study of AlN/Hf interface

Zhang

Zhuo

2023

J. Phys.: Conf. Ser.

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In this study, the performance of AlN (0001)/Hf (0001) interface, such as occupation characteristics and combined energy, were studied by using the first principles calculation package. In the AlN/Hf interface, the Al- and N-terminated interfaces have three stacking sites each (outermost top site, sub-outer top site, and hexagonal close-packed hollow site), comprising six different models. The most adhesion work occupies the N-terminal interface of the hcp-hollow site, and the interface energy was also the smallest and most stable, as well as a lower fracture work than the AlN/Ti interface. Moreover, the differential charge density were calculated, the partial density of states were plotted, and the bonding properties were discussed. Compared with other interfaces, the N-terminated interface with the hcp-hollow site exhibited more covalent characteristics; on the Al-terminated interface with the sub-outer top site, the Hf-Al metallic bond was formed. The most stable atomic occupation type in AlN/Hf interface is the hcp-hollow site of N atomic terminal.

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Interface asymmetry in AlN/Ni and Ni/AlN interfaces: A study using resonant soft X-ray reflectivity

Cited by 12 publications

References 20 publications

Study of Ni/AlN/Ni waveguide system for 8.05 keV incident energy

Study of Ni/AlN/Ni waveguide system for 8.05 keV incident energy

Surface and interface characterization of Ru/C/Ru trilayer structure using grazing incidence X‐ray reflectivity and X‐ray fluorescence

Density functional theory study of AlN/Hf interface

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