Interdiffusion in vacuum-deposited dielectric thin films

Lee, Y.J.; Lee, J.H.; Lee, Y.Y.; Kang, Yue; Kim, Y.S.; Kwon, Soonnam; Jeong, Kwang Sik

doi:10.1016/s0030-4018(01)01071-9

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…The required RI of a film to act as a single-layer anti-reflection (SLAR) coating is ∼1.20 @550 nm wavelength. Hence, conventional TiO 2 -based anti-reflection devices rely on multi-layered thin film systems (in combination with low-refractive-index materials SiO 2, MgF 2 , etc) with the high-index layer as TiO 2 [9,10]. The multi-functional characteristics of the material in the fields of self-cleaning, photocatalytic coatings, etc have attracted the attention of many researchers with regard to designing and fabricating ARC devices from a single TiO 2 material [11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of TiO₂-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Haque

Sikdar

et al. 2021

Nanotechnology

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Single-sided TiO2 thin films were prepared using a modified glancing angle deposition (GLAD) technique. An additional flux collimation plate was introduced into the GLAD arrangement to enhance the degree of collimation of depositing vapour flux. Enhancement in the ballistic growth of film on the substrate was observed with increasing distance from the vapour source. The substrate position near to the vapour source (i.e. bottom region) showed a high refractive index (RI, ∼1.336 @ 550 nm wavelength) and lower average film transmittance (∼94.5% in 400–900 nm wavelength range) compared to the others. In contrast, the TiO2 coating deposited at a distant position from the source (i.e. top region) showed a remarkably low RI (∼1.190 @ 550 nm wavelength) and excellent anti-reflection over a broad spectral region with a maximum average transmittance (∼95.3% in 400–900 nm wavelength) compared to the other substrate positions. The reduction in film RI was correlated qualitatively with the morphological alterations in the coating for different substrate positions. With a further increase in distance from the vapour source, an ultimate reduction in the RI of TiO2 to ∼1.101 was observed, which was ∼50% lower than the bulk TiO2 value (∼2.221 @ 550 nm wavelength). The present study reports the lowest RI of TiO2 together with fabrication of a TiO2-based broadband single-layer anti-reflection coating.

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Section: Introductionmentioning

confidence: 99%

Fabrication of TiO₂-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Haque

Sikdar

et al. 2021

Nanotechnology

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Multilayer AR coatings of TiO2/MgF2 for application in optoelectronic devices

Syed

Rafiq

Ali

et al. 2017

Optik

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Study of a novel ALD process for depositing MgF2 thin films

et al. 2007

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Magnesium fluoride is an ultraviolet (UV) transparent material which is widely used in optical applications over a wide wavelength range. We have developed a novel atomic layer deposition (ALD) process for depositing magnesium fluoride thin films for the first time. MgF2 films were grown at 250-400 degrees C using Mg( thd)(2) and TiF4 as precursors. The crystallinity, morphology, composition, thicknesses and refractive indices of the films were analyzed by X-ray diffraction/ reflection ( XRD/XRR), transmission electron microscopy ( TEM), atomic force microscopy ( AFM), field emission scanning electron microscopy ( FESEM), time-of-flight elastic recoil detection analysis ( TOF-ERDA), and UV-vis spectrophotometry. Electrical properties were also measured. The growth rate was temperature dependent decreasing from 1.6 A cycle 21 at 250 degrees C to 0.7 angstrom cycle(-1) at 400 degrees C. The films were polycrystalline at 250 - 400 degrees C. The refractive indices were between 1.34 - 1.42 and the permittivity 4.9. The impurity levels were below 0.6 at.% in the films deposited at 350 - 400 degrees C

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Interdiffusion in vacuum-deposited dielectric thin films

Cited by 3 publications

References 12 publications

Fabrication of TiO₂-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Fabrication of TiO₂-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Multilayer AR coatings of TiO2/MgF2 for application in optoelectronic devices

Study of a novel ALD process for depositing MgF2 thin films

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Interdiffusion in vacuum-deposited dielectric thin films

Cited by 3 publications

References 12 publications

Fabrication of TiO2-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Fabrication of TiO2-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Multilayer AR coatings of TiO2/MgF2 for application in optoelectronic devices

Study of a novel ALD process for depositing MgF2 thin films

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Fabrication of TiO₂-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique

Fabrication of TiO₂-based broadband single-layer anti-reflection coating by collimated glancing angle deposition technique