Interband transitions in [001]-(GaP)1(InP)m superlattices

The electronic structures of a monolayer quantum well (MLQW) in GaN are investigated by means of the first‐principles full potential linearized augmented plane waves method within the local density approximation (LDA). A super‐cell with periodic boundaries is used to study such systems. It is shown that one InN(AlN) MLQW in the GaN host modifies the localization of charge in the valence band maximum (VBM) and the conduction band minimum (CBM) of In(Al)N/GaN systems. On the other hand the change of the band gap depends on the depth of the MLQW in the GaN matrix. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Full‐potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

Lakdja¹,

Bouhafs²,

Ruterana

2006

Physica Status Solidi (a)

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On the origin of carrier localization on two-dimensional GaN substitution layers embedded in GaAs

Schmidt

Böhm

2003

Physica E: Low-dimensional Systems and Nanostructures

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Origin of carrier localization on two-dimensional GaN substitution layers embedded in GaAs

Schmidt

Böhm

2003

Phys. Rev. B

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Interband transitions in [001]-(GaP)1(InP)m superlattices

Cited by 3 publications

References 31 publications

Full‐potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

Full‐potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

On the origin of carrier localization on two-dimensional GaN substitution layers embedded in GaAs

Origin of carrier localization on two-dimensional GaN substitution layers embedded in GaAs

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