Interband impact ionization by terahertz illumination of InAs heterostructures

Abstract

Published by the AIP PublishingArticles you may be interested in InAs channel heterostructurefield effect transistors with InAs/AlSb shortperiod superlattice barriers

Nonlinear optical absorption and LO-phonon emission in steady-state terahertz-driven three-dimensional electron gases

“…THz radiation is of significant impact on the investigation and characterization of condensed-matter materials such as low-dimensional semiconductor systems and nanostructures. Recently, experimental measurements [1][2][3][4][5] have been conducted in investigating the nonlinear response of a two-dimensional electron gas ͑2DEG͒ to THz radiation fields provided by UCSB ͑Refs. 1-3͒ and FELIX ͑Refs.…”

“…4 and 5͒ FEL's. Some interesting phenomena, such as resonant absorption of THz radiation, 1 THz radiation enhanced electron temperature, 2 THz-photon induced impact ionization, 3 LO-phonon bottleneck effect, 4 THz-photon-assisted resonant tunneling, 5 etc., were observed in different 2DEG structures. These experimental observations have impelled further theoretical study.…”

Elementary electronic excitation in three-dimensional electron gases under free-electron laser radiations

“…[2][3][4][5] In recent years, there has been a rapid expansion in developing high-power and long-wavelength laser sources such as free-electron lasers ͑FEL's͒. At present, the powerful farinfrared ͑FIR͒ or terahertz (10 12 Hz) FEL's have become available at, e.g., the University of California, Santa Barbara [6][7][8] and the Free Electron Laser for Infrared Experiments, the Netherlands. [9][10][11] The current generation of the FEL's has already been able to provide the tunable source of linearly polarized terahertz radiations.…”

Calculation of the nonlinear free-carrier absorption of terahertz radiation in semiconductor heterostructures

“…THz lasers have been applied to experimental investigation of nonlinear transport and optical properties in electron gases such as those in semiconductor quantum wells and heterostructures. [1][2][3][4][5][6][7][8] The discovery of a new magnetoresistance oscillation and zero-resistance state in high-mobility electronic systems [9][10][11] has stimulated new theoretical interest in the transport properties of electrons under electromagnetic radiation. [12][13][14][15] A satisfactory understanding of the observed dc magnetoresistance oscillation has been achieved.…”