Interband faraday rotation in some perovskite oxides and rutile

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

“…Making use of the band gap of InN (0.64 eV) [ 26 ] and SrTiO 3 (3.2 eV) [ 27 ], the CBO (Δ E C ) is calculated to be 1.30 eV and the ratio of Δ E C /Δ E V is close to 1:1. As shown in Figure 2 , a type-I heterojunction is seen to be formed in the straddling configuration.…”

Valence Band Offsets of ZnO/SrTiO3, ZnO/BaTiO3, InN/SrTiO3, and InN/BaTiO3 Heterojunctions Measured by X-Ray Photoelectron Spectroscopy

“…This dipole term can also be neglected, just like the common semiconductor heterojunctions, since the electronegativities of the atoms constituting ZnO/STO heterojunction differ by up to 10% only. Through analysis of the VBO values reported for ZnO heterostructure (Monch et al, 2005), the dependence of VBO on the p-type branch-point energy is obtained to be (Baer et al, 1967)), ∆E C is calculated to be 0.79±0.09 eV. It would be interesting to compare our experimental values with the electrical transport results by Wu et al (Wu et al, 2008).…”

“…Since the factors that can affect the results can be excluded from the measured results, the experimental obtained VBO value is reliable. Making use of the band gap of InN (0.7 eV) (Yang et al, 2009) and SrTiO 3 (3.2 eV) (Baer et al, 1967), the CBO (∆E C ) is calculated to be 1.37 eV and the ratio of ∆E C /∆E V is close to 1:1. As shown in Fig.…”

Synthesis, spark plasma sintering and electrical conduction mechanism in BaTiO3–Cu composites

“…Below a critical value x c of 20 vol.% E a remains almost constant at a level of around 0.954 eV and above x c E a shows a linear decrease down to 0.220 eV for 27 vol.% of Cu addition. The activation energies in all samples are much smaller than the band gap for intrinsic electronic conduction in BaTiO 3 (approximately 3 eV), 32,33 indicating that extrinsic conduction mechanisms associated with defects are dominant in all samples.…”