Interband Faraday Rotation and Ellipticity Observed at the Absorption Edge in Silicon

Stramska, H.; Bachan, Z.; Byszewski, P.; Kołsodziejczak, J.

doi:10.1002/pssb.19680270154

Cited by 8 publications

(2 citation statements)

References 7 publications

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“… 1 ) 5300 1 CdTe 2.7 × 10 3 (see ref. 94 ) 775 94 Si 30 95 1050 95 EuS 4.6 × 10 5 (see ref. 96 ) 560 96 Typical Verdet constants of 2D magnetic materials Cr 2 Te 2 Ge 6 1.4 × 10 5 (see ref.…”

Section: Discussionmentioning

confidence: 99%

Giant Faraday rotation in atomically thin semiconductors

Carey,

Wessling,

Steeger

et al. 2024

Nat Commun

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Faraday rotation is a fundamental effect in the magneto-optical response of solids, liquids and gases. Materials with a large Verdet constant find applications in optical modulators, sensors and non-reciprocal devices, such as optical isolators. Here, we demonstrate that the plane of polarization of light exhibits a giant Faraday rotation of several degrees around the A exciton transition in hBN-encapsulated monolayers of WSe2 and MoSe2 under moderate magnetic fields. This results in the highest known Verdet constant of -1.9 × 107 deg T−1 cm−1 for any material in the visible regime. Additionally, interlayer excitons in hBN-encapsulated bilayer MoS2 exhibit a large Verdet constant (VIL ≈ +2 × 105 deg T−1 cm−2) of opposite sign compared to A excitons in monolayers. The giant Faraday rotation is due to the giant oscillator strength and high g-factor of the excitons in atomically thin semiconducting transition metal dichalcogenides. We deduce the complete in-plane complex dielectric tensor of hBN-encapsulated WSe2 and MoSe2 monolayers, which is vital for the prediction of Kerr, Faraday and magneto-circular dichroism spectra of 2D heterostructures. Our results pose a crucial advance in the potential usage of two-dimensional materials in ultrathin optical polarization devices.

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Section: Discussionmentioning

confidence: 99%

Giant Faraday rotation in atomically thin semiconductors

Carey,

Wessling,

Steeger

et al. 2024

Nat Commun

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show abstract

“…In one of the first papers (Rosenberg et al, 1964) it was shown that the Faraday rotation can be resonantly enhanced by a FabryPerot resonator. The importance of considering the effects of internal multiple reflections in the measurements of the Faraday rotation angle was noted by the authors (Piller 1966;Rheinhlander et al, 1975;Stramska et al 1968;Srivastava et al, 1975;Vorobev et al, 1972).…”

Section: Introductionmentioning

confidence: 99%

Transmission, Reflection and Thermal Radiation of a Magneto-Optical Fabry-Perot Resonator in Magnetic Field: Investigations and Applications

Liptuga¹,

Morozhenko²,

Pipa³

2012

Infrared Radiation

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Interband faraday rotation in silicon

Keßler

Metzdorf

1973

Physica Status Solidi (b)

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The nonresonant interband Faraday rotation in silicon single crystals was measured in the spectral region 0.55 to 3.1 eV. A new modulation method is developed for measuring rotations of the plane of polarization of linearly polarized radiation to an accuracy of better than 0.001° in normal cases. The range of measurements was extended up to 2 eV above the indirect energy gap with sample thicknesses between 1 mm and 1 μm, at temperatures between 100 and 350 K, and in a magnetic field of 2 T. The Faraday rotation increases monotonously in the whole range up to a photon energy of 3.1 eV. As the analysis by means of theoretical dispersion functions, of the dispersion relation known as Becquerel equation, and the temperature dependence shows, the interband Faraday rotation in silicon is only associated with direct transitions, the band gap of which should be between 3.2 and 3.4 eV and is not below 3.1 eV.

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Interband Faraday Rotation and Ellipticity Observed at the Absorption Edge in Silicon

Cited by 8 publications

References 7 publications

Giant Faraday rotation in atomically thin semiconductors

Giant Faraday rotation in atomically thin semiconductors

Transmission, Reflection and Thermal Radiation of a Magneto-Optical Fabry-Perot Resonator in Magnetic Field: Investigations and Applications

Interband faraday rotation in silicon

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