Interband cascade lasers with AlGaAsSb bulk cladding layers

Weih, Robert; Bauer, Adam Q.; Kamp, M.; Höfling, Sven

doi:10.1364/ome.3.001624

Cited by 25 publications

(8 citation statements)

References 11 publications

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“…Although these SLs offer excellent electrical conductivity, they exhibit three drawbacks compared to bulk AlGaAsSb cladding layers, namely a relatively high refractive index (n∼3.4), a low thermal conductivity and a complex growth. Indeed, contrary to type-I GaSb laser diodes emitting in the 2 to 3.6 µm range which exploit Al-rich AlGaAsSb cladding layers (n∼3.3) [16], the SL-baring laser diodes show reduced optical confinement and thereby require thicker epitaxial stacks to successfully operate [12,17]. Furthermore, the laser thermal management is detrimentally affected by the thermal conductivity of InAs/AlSb superlattices (3 W/m.K) which is smaller than that of Al 0.9 Ga 0.1 AsSb (7 W/m.K) [18,19] and which can even be further affected by their multiple interface heat resistance.…”

Section: Introductionmentioning

confidence: 99%

“…This large optimal temperature difference unambiguously requires a compromise to get high performance lasers. Indeed, it has been demonstrated successfully that AlGaAsSb alloys can be used as cladding layers of ICLs [17]. In this latter reference, the two claddings were grown at 500°C and authors demonstrated ICL with threshold current density of 220 A/cm 2 and CW operation up to 45°C with an emission at 3.4 µm.…”

Section: Introductionmentioning

confidence: 99%

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Interband cascade Lasers with AlGaAsSb cladding layers emitting at 33 µm

Díaz-Thomas¹,

Stepanenko²,

Bahriz³

et al. 2019

Opt. Express

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We investigate the impact of the growth conditions of AlGaAsSb cladding layers on the properties of interband cascade lasers (ICLs). For an optimized structure emitting at 3.3 µm, we achieve an internal quantum efficiency of 65% per stage in good agreement with conventional ICL using InAs/AlSb superlattice cladding layers, in spite of internal losses of 15 cm −1 due to higher optical losses in the n-type AlGaAsSb alloys. Finally, we report a narrow ridge ICL emitting at 3.33 µm operating in continuous wave up to 80°C that produces 1 mW/uncoated facet at 80°C, 10 mW at 40°C and more than 12 mW at 20°C.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interband cascade Lasers with AlGaAsSb cladding layers emitting at 33 µm

Díaz-Thomas¹,

Stepanenko²,

Bahriz³

et al. 2019

Opt. Express

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“…Values reported in literature typically range between a few tens of ns to µs. [2][3][4] Theoretical studies have been reported in the past to determine the thermal transients of laser diodes due to self-heating. Various mathematical models have been developed for diode lasers ranging from simple one-dimensional analysis 5 to more comprehensive models.…”

Section: Introductionmentioning

confidence: 99%

Transient thermal analysis of semiconductor diode lasers under pulsed operation

et al. 2017

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Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are ‘short’. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

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“…[1][2][3][4] The recent availability of MIR ICLs has driven the development of new chemical sensing systems that make use of unique molecular spectroscopic signatures in the MIR. 5 With envisaged applications in chemical analysis and biomedicine, MIR ICLs present a viable alternative to MIR quantum cascade lasers (QCLs) due to their much lower input-power requirements.…”

mentioning

confidence: 99%

“…5 With envisaged applications in chemical analysis and biomedicine, MIR ICLs present a viable alternative to MIR quantum cascade lasers (QCLs) due to their much lower input-power requirements. [1][2][3][4]6 Furthermore, high sensitivity MIR detectors usually require active cooling to be effective (and even cryogenic cooling at longer wavelengths).…”

mentioning

confidence: 99%