“…Furthermore, noticeable charge transfer and intermixing at oxide heterointerfaces result in the occurrence of a variety of point defects [129,130] in conjunction with structural defects, [13,14,101] which further convolutes the interface structure. Development of charge transfer ionic potentials for oxides, [131][132][133] reactive force-fields, [134] bond-valence interatomic potentials, [135,136] and second-nearestneighbor modified embedded-atom method [137] are prospective approaches that could address the complex charge transfer and related atomic-scale processes at semi-coherent oxide heterointerfaces, further assisting in comprehending the actual atomic and chemical structure of the interface. As recently demonstrated by Uberuaga and co-workers, [138][139][140] albeit for a heterointerface between metal and metal oxide, one promising strategy to investigate the structure of misfit dislocations at oxide heterostructures is to strain the film and the substrate so as to keep the supercell size tractable, while still incorporating the full misfit dislocation structure in the DFT supercell.…”