We deposited Os atoms on S- and Se-doped
boronic graphenic surfaces
by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)]
encapsulated in a triblock copolymer. The surfaces were characterized
by energy-dispersive X-ray (EDX) analysis and electron energy loss
spectroscopy of energy filtered TEM (EFTEM). Os atoms moved ca. 26× faster on the B/Se surface compared to the
B/S surface (233 ± 34 pm·s–1versus 8.9 ± 1.9 pm·s–1). Os atoms formed dimers
with an average Os–Os distance of 0.284 ± 0.077 nm on
the B/Se surface and 0.243 ± 0.059 nm on B/S, close to that in
metallic Os. The Os2 molecules moved 0.83× and 0.65×
more slowly than single Os atoms on B/S and B/Se surfaces, respectively,
and again markedly faster (ca. 20×) on the B/Se
surface (151 ± 45 pm·s–1 versus 7.4 ±
2.8 pm·s–1). Os atom motion did not follow
Brownian motion and appears to involve anchoring sites, probably S
and Se atoms. The ability to control the atomic motion of metal atoms
and molecules on surfaces has potential for exploitation in nanodevices
of the future.