“…Such processes, which are of physical concern, are conditioned by the presence of dense plasma in the samples. The range of observed PLA-induced processes includes softening of phonon modes with increasing plasma density, change of bandgap width with increasing nc (non-equilibrium carrier concentration), registration of optical and electrical phenomena in semiconductors depending on nc (Ahmanov et al, 1985), etc. Spatial coherence of laser radiation used for pulse laser treatments of semiconductor materials allows creation on the surface of annealed Later, nanosecond pulsed treatments using excimer XeCl (λ = 308 nm) (Volodin et al, 1998) and ArF laser radiation (λ = 193 nm) were used to obtain silicon nanoclusters and achieve crystallisation of a-Si inclusions in SiNx and SiOx films (Rochet et al, 1988).…”