1985
DOI: 10.3367/ufnr.0147.198512b.0675
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Interaction of powerful laser radiation with the surfaces of semiconductors and metals: nonlinear optical effects and nonlinear optical diagnostics

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Cited by 126 publications
(43 citation statements)
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References 9 publications
(15 reference statements)
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“…Such processes, which are of physical concern, are conditioned by the presence of dense plasma in the samples. The range of observed PLA-induced processes includes softening of phonon modes with increasing plasma density, change of bandgap width with increasing nc (non-equilibrium carrier concentration), registration of optical and electrical phenomena in semiconductors depending on nc (Ahmanov et al, 1985), etc. Spatial coherence of laser radiation used for pulse laser treatments of semiconductor materials allows creation on the surface of annealed Later, nanosecond pulsed treatments using excimer XeCl (λ = 308 nm) (Volodin et al, 1998) and ArF laser radiation (λ = 193 nm) were used to obtain silicon nanoclusters and achieve crystallisation of a-Si inclusions in SiNx and SiOx films (Rochet et al, 1988).…”
Section: Laser Treatments Of Geo2 Heterolayersmentioning
confidence: 99%
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“…Such processes, which are of physical concern, are conditioned by the presence of dense plasma in the samples. The range of observed PLA-induced processes includes softening of phonon modes with increasing plasma density, change of bandgap width with increasing nc (non-equilibrium carrier concentration), registration of optical and electrical phenomena in semiconductors depending on nc (Ahmanov et al, 1985), etc. Spatial coherence of laser radiation used for pulse laser treatments of semiconductor materials allows creation on the surface of annealed Later, nanosecond pulsed treatments using excimer XeCl (λ = 308 nm) (Volodin et al, 1998) and ArF laser radiation (λ = 193 nm) were used to obtain silicon nanoclusters and achieve crystallisation of a-Si inclusions in SiNx and SiOx films (Rochet et al, 1988).…”
Section: Laser Treatments Of Geo2 Heterolayersmentioning
confidence: 99%
“…Earlier, PLA treatments of thin-film structures with light quanta exceeding in energy the bandgap width of semiconductor material were recognized as a useful means for rapid (typically, during some tens of nanoseconds or less) restoration of the crystalline structure in disordered or even completely amorphized nearsurface layers of Si (Ahmanov et al, 1985). At a proper choice of laser parameters, almost all laser radiation can be absorbed within the film; hence, this radiation does not reach the wafer and does not heat it.…”
Section: Laser Treatments Of Geo2 Heterolayersmentioning
confidence: 99%
“…Consequently, the main effects occur in a thin near-surface layer, the depth of which is determined by the length of thermal diffusion (0.1-0.7 μm [11]) and the absorption coefficient. Intensity of the laser radiation was below the threshold of thermal destruction of the SiO 2 /Cd 1-x Zn x Te structure.…”
mentioning
confidence: 99%
“…This ratio corresponds to the concept about the discrete changes in the periodicity of the regular structures of the relief, which is formed via the interaction of laser radiation with condensed media. This concept exists in the framework of the universal polariton model (see, for example, the review [7]). Moreover, the spatial changes must be multiples of the main period, which is determined by the wavelength of incident radiation.…”
Section: Figmentioning
confidence: 99%