Interaction of phonons with 2D exciton gas

Akimov, A. V.; Moskalenko, E. S.; Challis, L. J.; Kaplyanskiǐ, A. A.

doi:10.1016/0921-4526(95)00633-8

Cited by 12 publications

(3 citation statements)

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“…The reported values of τ f and τ R vary from a few picoseconds to a couple of hundred picoseconds depending on experimental conditions such as QW widths, excitation density, temperature, etc. Moreover, the effect of acoustic phonons on exciton luminescence has been experimentally investigated by using luminescence detection [17,18] which enables us to study the exciton-acoustic phonon interaction in detail.…”

Section: Introductionmentioning

confidence: 99%

Formation of excitons from free electron–hole pairs due to acoustic phonon interactions in quantum wells

Singh

2001

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Formation of excitons from free electron–hole pairs due to acoustic phonon interactions in quantum wells

Singh

2001

Superlattices and Microstructures

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“…The phonon drag effect in selectively doped GaAs heterostructure has been also experimentally investigated. 14,15 Phonon-induced modification of exciton spectra in DQW's was reported last year, 16 whereas experimental study of the ''phonoelectric'' phenomena was not carried out yet. The prime objects of this paper are to describe the main peculiarities of this type of response and to provide the numerical results in addition to our analytical calculations.…”

Section: Introductionmentioning

confidence: 99%

Acoustic phonon modulation of the electron response in tunnel-coupled quantum wells

Vasko

Mitin

1997

Phys. Rev. B

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Modulation of the electron properties of tunnel-coupled double quantum wells by acoustic phonon pumping is considered. Phonon-induced voltage ͑or induced dipole moment͒ and phonon-drag effect are calculated for the case of high-energy phonon excitation. Linear electron response, with respect to the phonon-pumping intensity, is studied taking into account intrawell and interwell scattering processes due to interface roughness. From numerical estimations we obtained a phonon-induced drop in the potential on the order of 0.1-0.01 meV and a characteristic drag velocity on the order of 100 cm/s for a nonequilibrium phonon temperature equal to 20 K. The possible applications of such structures are noted.

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“…A theoretical analysis of these processes has been carried out [2,3] and a direct observation of acoustic phonon-assisted tunnelling in double barrier resonant tunnelling stuctures has been recently obtained using phonon pulses [4]. Detailed information on all these relaxation and tunnelling processes would be of value in the development of semiconductor nanostuctures as phonon spectrometers and generation at frequencies up to 1 ΤHz and above [2][3][4][5].In the present paper we are studying the cw photoluminescence from slightly asymmetric DQWs, in which the widths of the coupled QWs differ by only 1 or 2 monolayers (MLs). The paper is aimed particularly at extracting information on (895) …”

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confidence: 99%

Tunnelling of Direct and Indirect Excitons in Slightly Asymmetric Double Quantum Wells

et al. 1996

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We report the first studies of luminescence spectra from asymmetric double quantum wells of GaAs with widths around 100 Å differing by only one (2.8 A) or two monolayers. Studies of the position and intensity of the direct and indirect exciton lines suggest the existence of acoustic phonon-assisted tunnelling between exciton states separated by a few meV. At temperatures 10-20 K the electron tunnelling process is fast enough to maintain thermal equilibrium between these direct and indirect excitons which are connected with holes in the same quantum well.PACS numbers: 73.20. Dx, 63.20.Kr In GaAs/AlGaAs double quantum wells (DQWs) electron and hole tunnelling through the thin barrier have been intensively studied by both cw and time-resolved luminescence techniques and it is clear that the tunnelling processes are signiflcantly modified by excitonic effects [1]. Much of this work was carried out on asymmetric DQWs in which the ground state energy differences in the two wells were appreciably more than 1 meV for both electrons and holes. For smaller energy differences, it has not yet been possible to separate the non-resonant tunnelling associated with acoustic phonons from that caused by elastic scattering from impurities and interface defects followed by phonon relaxation. For simplicity therefore we refer to the observed process as phonon-assisted tunnelling in the expectation that in our high quality samples this will turn out to be the stronger of the two. A theoretical analysis of these processes has been carried out [2,3] and a direct observation of acoustic phonon-assisted tunnelling in double barrier resonant tunnelling stuctures has been recently obtained using phonon pulses [4]. Detailed information on all these relaxation and tunnelling processes would be of value in the development of semiconductor nanostuctures as phonon spectrometers and generation at frequencies up to 1 ΤHz and above [2][3][4][5].In the present paper we are studying the cw photoluminescence from slightly asymmetric DQWs, in which the widths of the coupled QWs differ by only 1 or 2 monolayers (MLs). The paper is aimed particularly at extracting information on (895)

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Interaction of phonons with 2D exciton gas

Cited by 12 publications

References 10 publications

Formation of excitons from free electron–hole pairs due to acoustic phonon interactions in quantum wells

Formation of excitons from free electron–hole pairs due to acoustic phonon interactions in quantum wells

Acoustic phonon modulation of the electron response in tunnel-coupled quantum wells

Tunnelling of Direct and Indirect Excitons in Slightly Asymmetric Double Quantum Wells

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