Interaction of oxygen with the system

Rührnschopf, K.; Borgmann, D.; Wedler, G.

doi:10.1016/s0039-6028(96)01213-7

Cited by 15 publications

(7 citation statements)

References 36 publications

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“…The relative increase of the suboxide peak in spectrum B compared with spectrum A is attributed to a catalytically induced oxidation due to the deposited Fe particles. 8 Subsequent annealing to 410 K for 150 and 420 s leads to an ordering of the surface structure and to the formation of a (1 ð 1) LEED pattern (Fig. 2(b)).…”

Section: Resultsmentioning

confidence: 98%

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Electron spectroscopic studies of iron and iridium silicides

Probst

Denecke

Whelan

et al. 2002

Surface & Interface Analysis

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The formation of iron and iridium silicides was studied by means of highly resolved photoelectron spectroscopy of core and valence levels as well as by means of low-energy electron diffraction (LEED). The experiments were carried out at BESSY II in Berlin using synchrotron radiation for the photoemission studies. After evaporation of seven monolayers of Fe on Si(111) at room temperature and annealing to 410 K for 420 s, an ordering of the surface structure and the formation of an (1×1) LEED pattern is observed. Upon further heating to 500 K a strong change in both UPS and XPS spectra occurs. This behaviour is attributed to the formation of FeSi x (1 ≤ x ≤ 2). After annealing of a thin Ir layer on Si(100) to 1130 K, a p(2 × 2) LEED pattern with respect to the silicon substrate is observed, which indicates the formation of a well-ordered surface compound. Comparison with the literature shows that the formation of an IrSi species is well known, but only an amorphous and a polycrystalline modification have been described upto now.

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Section: Resultsmentioning

confidence: 98%

“…In our group, the layer-by-layer growth of iron films was described on Si(100) 7 and the formation and oxidation 8,9 of polycrystalline FeSi 2 were studied by means of electron spectroscopy. Iron silicide films were also produced by adsorption and dissociation of Fe(CO) 5 on Si(111).…”

Section: Introductionmentioning

confidence: 99%

Electron spectroscopic studies of iron and iridium silicides

Probst

Denecke

Whelan

et al. 2002

Surface & Interface Analysis

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“…The small peak observed at 532.5 eV in Fig. 4 can be assigned to the silicon sub-oxide [37]. It is reported that the binding energies of O 1s for KO 2 , K 2 O 3 and K 2 O 2 are 534.3 eV, 532.0 eV and 531.0 eV, respectively [38].…”

Section: The Role Of Deposition Anglementioning

confidence: 83%

Deposition of potassium–oxygen on silicon surfaces by pulsed laser ablation of potassium superoxide: Study of work function changes

2006

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“…There have been many studies into Fe films and nanoparticles (NPs) on Si substrates. [4][5][6][7][8] The films and NPs show reactivity at the interface of the Si substrates, which may affect application of the materials in general. 9 However, the reaction of Fe-based materials/Si is not well understood.…”

Section: Introductionmentioning

confidence: 99%

“…In Fe oxide/Si substrates, some papers report that Fe was reduced and Si was oxidized. [4][5][6] There are some conflicting reports that the opposite redox reaction occurred at the interfaces in Fe film/ Si oxide systems. 7 Other researchers 8 have suggested that the formation of a Fe/Si alloy (silicidation) took place when Fe incorporated some oxygen atoms, and that Si oxidation was enhanced at the interfaces of Fe films on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas

Hamanaka

Nakamura

Ishibe

et al. 2013

Journal of Applied Physics

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Iron (Fe) nanocrystals (NCs) were epitaxially grown on silicon (Si) substrates, where interfacial alloying of Fe and Si (silicidation) was prevented using an ultrathin SiO2 film. Nanowindows (NWs) composed of Si and germanium (Ge) were introduced into this SiO2 layer. The crystallographic arrangement of the Si substrates was conveyed though the NWs, while Fe and Si atoms were not intermixed. Reactions between the epitaxial Fe NCs and Si substrate in the presence of oxygen gas were also investigated. Oxygen atoms facilitated the diffusion of Fe from NCs to Si substrates mainly through Si NWs. As a result, increase of oxygen concentration led to Si oxidation near the interface. This means Fe NCs played a role like a catalysis for Si oxidation. The interfacial reaction was changed drastically by control of nanometer-sized interfaces using Ge NWs in the ultrathin SiO2 films.

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Interaction of oxygen with the system

Cited by 15 publications

References 36 publications

Electron spectroscopic studies of iron and iridium silicides

Electron spectroscopic studies of iron and iridium silicides

Deposition of potassium–oxygen on silicon surfaces by pulsed laser ablation of potassium superoxide: Study of work function changes

Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas

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