Interaction of intrinsic defects with impurities in Al doped ZnSe single crystals

Ivanova, Galina; Nedeoglo, D. D.; Negeoglo, N. D.; Sirkeli, Vadim P.; Tiginyanu, I. M.; Ursaki, V. V.

doi:10.1063/1.2712147

Cited by 22 publications

(9 citation statements)

References 32 publications

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“…We will consider the p-GaN/n-ZnO LED structure with and without polarization effects. The range of material parameters used in our simulation study was collected from [9,[37][38][39] and is summarized in table 1.…”

Section: P-gan/n-zno Ledmentioning

confidence: 99%

Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Sirkeli

Yilmazoglu

Küppers

et al. 2015

Semicond. Sci. Technol.

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We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN-and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm −2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10 −4 , 1.6 × 10 −4 , and 6.4 lm W −1 of PE, and 1.3 × 10 −4 , 2.9 × 10 −4 , and 12 cd A −1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.

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Section: P-gan/n-zno Ledmentioning

confidence: 99%

Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Sirkeli

Yilmazoglu

Küppers

et al. 2015

Semicond. Sci. Technol.

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“…В ряде работ [4,[19][20][21]25,26] отмечалось, что в результате диффузии алюминия в ZnSe образуется целый ряд комплексов алюминия с остаточными примесями и собственными дефектами. Так, сходные с регистрируемыми в данной работе линии наблюдались в работах [15,21]. В этих работах исследовались кристаллы ZnSe, легированные алюминием из расплава цинка.…”

Section: результаты экспериментовunclassified

“…Наблюдалась в этих работах и линия, близкая по своим характеристикам регистрируемой в данной работе линии 480 нм. Авторы работы [15] связывают эту линию с люминесценцией мелкого донора V Se Na Zn . Близкие к наблюдаемым в данной работе спектры люминесценции регистрировались также в работе [4].…”

Section: результаты экспериментовunclassified

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

Калинушкин¹,

Гладилин²,

Уваров³

et al. 2021

Физика И Техника Полупроводников

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Spatial distribution of luminescence characteristics of CVD-ZnSe doped with Aluminum and both Aluminum and Iron by thermal diffusion were studied. The diffusion method leads to formation of two areas in crystal volume: (1) area with high aluminum concentration in which the luminescence of defective-impurity centers (DICs) dominates and exciton luminescence is absent and (2) area with low aluminum concentration in which exciton luminescence dominates. The border of two areas recognized on luminescence map is sharp that not corresponded to diffusion nature. The result is explained by assuming the anomalous nature of aluminum diffusion, leading to a sharp change in the aluminum concentration at a certain distance from the doping surface. Method of aluminum doping process applied in present paper leaded to weakens of well-known luminescence suppression effect by iron ions in ZnSe.

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“…The electrical conductivity of ZnSe crystals can be controlled by doping and post-growth thermal treatments [123] which in turn determines the diameter of the produced pores by anodization. Figure 13(e) illustrates a porous template fabricated on 1 mm thick n-ZnSe substrate with free electron concentration of 7 × 10 16 cm -3 .…”

Section: Templated Electrochemical Deposition Of Metal Nanowires Nano...mentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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Interaction of intrinsic defects with impurities in Al doped ZnSe single crystals

Cited by 22 publications

References 32 publications

Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

Porous semiconductor compounds

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