Interaction of interfacial charge and ferroelectric polarization in a pentacene/poly(vinylidene fluoride-trifluoroethylene) double-layer device

Li, Jun; Taguchi, Dai; Ou‐Yang, Wei; Manaka, Takaaki; Iwamoto, Mitsumasa

doi:10.1063/1.3624477

Cited by 34 publications

(42 citation statements)

References 14 publications

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“…The voltages at the peak positions are the V c for these devices. As expected, the device with d s ¼ 0 nm (blue curve) demonstrates two symmetric peaks with V c ¼ 8.7 V. However, the device with d s ¼ 60 nm exhibits six peaks (see peaks 1-6 in the red curve) with the V c at B10, B21 and B28 V, indicating a three-step polarization switching process, in contrast to the two-step process for the MFSM structure 31 . Peaks 1, 3, 4 and 6 can be shown more clearly in the derivative plot of this curve (see Supplementary Fig.…”

Section: Resultsmentioning

confidence: 89%

Storage of an electric field for photocurrent generation in ferroelectric-functionalized organic devices

Dalgleish

Matsushita

et al. 2014

Nat Commun

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Organic optoelectronic devices are usually driven by the electric field generated from an electrode potential difference or bias voltage. Although poled ferroelectric domains may produce oriented stray fields, few efforts have been made to utilize them for photocurrent generation in organic devices. Here we show that large net fields caused by incomplete screening during ferroelectric polarization, and which can be 'restored' by short voltage pulses, can facilitate exciton dissociation in organic semiconductors. The oriented fields, comparable with that produced by an electrode potential difference (1B10 MV m À 1 ), here are found to be responsible for the photocurrent in our devices. A prototype for an organic photodetector driven by such stray fields is demonstrated. The photoresponsivity, without any optimization, can achieve B0.1 mA W À 1 . This study provides a different operation principle for the generation of photocurrent in organic optoelectronic devices. Furthermore, the polarity-tunable photoresponse may lead to new photoresponsive memory devices.

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Section: Resultsmentioning

confidence: 89%

Storage of an electric field for photocurrent generation in ferroelectric-functionalized organic devices

Dalgleish

Matsushita

et al. 2014

Nat Commun

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“…The obvious hysteresis should be due to the switching between both polarization states, rather than the switching between one polarization state and one depolarization state reported in references 10 and 14. In fact, in the study of switching dynamics of P(VDF-TrFE)/organic semiconductor (such as α,ω-Dihexylsexithiophene 15 and pentacene 16 ) capacitors, ferroelectric switching between both polarization states was proved except that two-step reversal occurred during polarization reversal toward the positive side. 15 Another is that both positive and negative polarization states can retain for relatively long time during retention measurement.…”

Section: Resultsmentioning

confidence: 99%

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Zhang

Weng

et al. 2015

AIP Advances

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Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed.

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“…As a result, carrier behaviors in the active semiconductor layer, e.g., pentacene, have been deeply studied in terms of the turn-over of spontaneous polarization of ferroelectric layer. 12,13 For the p-type pentacene OFETs with a ferroelectric P(VDF-TrFE) gate insulator, hole/electron injection, transportation, charging, and discharging at the P(VDF-TrFE) gate insulator interface and so forth have been clarified in response to the turn-over of spontaneous polarization of ferroelectric layer. However, these are no longer sufficient to account for carrier behaviors in a variety of organic semiconductors being utilized with ferroelectric P(VDF-TrFE) layers.…”

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confidence: 99%

“…In this study, carrier behaviors in the metal-insulatorsemiconductor-metal (MISM) capacitors comprised a ferroelectric P(VDF-TrFE) gate insulator and a C60 semiconductor layer were analyzed, by using the conventional displacement current measurement (DCM) and the electric-field-induced optical second-harmonic generation (EFISHG) measurement, 12,13 in terms of the turn-over of spontaneous polarization of ferroelectric P(VDF-TrFE) gate insulator. As a result, the carrier motion governed by electrostatic interaction at the P(VDF-TrFE)/C60 interface as well as by the turn-over of spontaneous polarization of ferroelectric P(VDF-TrFE) gate insulator has been figured out.…”

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confidence: 99%

Analysis of carrier behavior in C60/P(VDF-TrFE) double-layer capacitor by using electric-field-induced optical second-harmonic generation measurement

Cui

Taguchi

Manaka

et al. 2013

Journal of Applied Physics

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By using displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier behavior in the indium-tin oxide (ITO)/Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/C60/Au(or Al) capacitors. Two DCM peaks appeared asymmetrically at around −35.5 V and +30.0 V in the dark. Correspondingly, the EFISHG response from the C60 layer was observed, but the peak positions were different with respect to DCM ones. The results show that the spontaneous polarization of the ferroelectric P(VDF-TrFE) polymeric layer directly affects the electric field in the C60 layer, and thus governs the carrier motion in this layer. As a result, the C60 layer serves like an insulator in the dark, while electrons and holes are captured and released at the interface in response to the turn-over of spontaneous polarization of ferroelectric layer. On the other hand, under white light illumination, C60 layer serves like a conductor due to the increase of photogenerated mobile carriers, and these carriers dominate the carrier motions therein. Our findings here will be helpful for analyzing carrier behaviors in organic electronic devices using ferroelectric polymers.

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Interaction of interfacial charge and ferroelectric polarization in a pentacene/poly(vinylidene fluoride-trifluoroethylene) double-layer device

Cited by 34 publications

References 14 publications

Storage of an electric field for photocurrent generation in ferroelectric-functionalized organic devices

Storage of an electric field for photocurrent generation in ferroelectric-functionalized organic devices

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Analysis of carrier behavior in C60/P(VDF-TrFE) double-layer capacitor by using electric-field-induced optical second-harmonic generation measurement

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