Interaction of a semiconductor sample partly filling a waveguide's window with millimetre wave radiation

Kancleris, Ž.; Tamošiūnas, V.; Dagys, M.; Simniškis, R.; Agee, F.J.

doi:10.1049/ip-map:20045022

Cited by 12 publications

(14 citation statements)

References 4 publications

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“…Therefore, even in a small dimension obstacles placed in the waveguide some resonances might occur. It was also confirmed by our earlier investigations of the semiconductor obstacles in the rectangular waveguide [10,11]. In the interim report [3], we have demonstrated that for H 01 mode the position of the resonance in the frequency scale and its type strongly depends on the configuration of the metal contacts.…”

Section: Resonancessupporting

confidence: 82%

“…Considering that the signal amplitude depends not only on the DC voltage drop on the RS but on the input resistance of the measurement unit used for the output signal measurement, the proposed definition of the sensitivity is likely more acceptable. Inserting (12), (10), and (7) into (14) one can get the following expression ( )…”

Section: Sensitivitymentioning

confidence: 99%

“…This assumption is valid up to and including X-band. Therefore, wishing to compensate the frequency response of the sensitivity at higher frequency bands the decrease of β * with frequency should be taken into account [10].…”

Section: The Programmentioning

confidence: 99%

“…The resonance in general is observed when either the length of the structure l or width corresponds to the integer number of λ d /2, where λ d is the wavelength of microwaves in the structure. Since the resonance might be used as a tool for the engineering of the output signal dependence on frequency [10,11] we considered in more detail the influence of electrophysical parameters of the SE (size and specific resistance) to the resonance phenomena in it.…”

Section: Resonancesmentioning

confidence: 99%

“…First, we determined maximum power up to which the waveguide with a radius a = 10 mm can be potentially used. Considering the electric field strength 25000 V/cm as a limiting due to a breakdown of air, one can calculate the transmitted maximum power P max for the H 11 mode using expression (10). At f = 10.3 GHz 0.65 MW was obtained.…”

Section: Frequency Response Optimizationmentioning

confidence: 99%

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Interaction of Semiconductor Obstacle with Electromagnetic Wave Propagating in Circular Waveguide

Kancleris¹

2008

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)Semiconductor Physics Institute Microwave Laboratory A. Gostauto 11 Vilnius LT-01108 Lithuania PERFORMING ORGANIZATION REPORT NUMBERN/A SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)EOARD Unit 4515 BOX 14 APO AE 09421 SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S)Grant 07-3028 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTES ABSTRACTThis report results from a contract tasking Semiconductor Physics Institute as follows: To achieve the proposed goals, the modeling of the circular waveguide section containing semiconductor obstacle will be performed. To calculate the average electric field in the semiconductor obstacle the finite difference time domain method will be used. Although, the lowest critical frequency in the circular waveguide is characteristic to H11 mode higher modes such as E01 and H01 are also sometimes used. Depending on mode some components of electromagnetic field are suppressed, nevertheless in the vicinity of the obstacle all six components of electromagnetic field might be excited and they should be taken into account when determining averaged electric field in the semiconductor obstacle. Since the resistive sensor actually feels the amplitude of electric field, the distribution of electric field component within the waveguide should have a crucial influence on the performance of the sensor and this fact should be taken into account in sensors design. Therefore it is also planning to investigate the behavior of the averaged electric field in the semiconductor obstacle when different modes are excited in the waveguide.To perform investigation it is planned to use internal programs for the modeling of electromagnetic wave propagating in the circular waveguide with the obstacle. Such modeling has already been done in rectangular waveguide with semiconductor obstacle placed on a wide wall of the waveguide and in the obstacle under the thin metal diaphragm. In both cases all six components of electromagnetic field in Cartesian coordinate system has been determined. It is planned to modify the program so that it should be able to calculate the electromagnetic field components in cylindrical coordinate system. SUBJECT TERMS

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Section: Resonancessupporting

confidence: 82%

Section: Sensitivitymentioning

confidence: 99%

Section: The Programmentioning

confidence: 99%

Section: Resonancesmentioning

confidence: 99%

Section: Frequency Response Optimizationmentioning

confidence: 99%

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