Interaction effects of cathode power, bias voltage, and mid-frequency on the structural and mechanical properties of sputtered amorphous carbon films

Tillmann, Wolfgang; Dias, Nelson Filipe Lopes; Stangier, Dominic; Bayer, М.; Moldenhauer, Henning; Debus, J.; Schmitz, Marie; Berges, U.; Westphal, C.

doi:10.1016/j.apsusc.2019.05.131

Cited by 16 publications

(1 citation statement)

References 35 publications

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“…For the film deposited using [Eu(dpfamd) 3 ] 1 , the D- and G-Raman lines at 1335 cm –1 and 1515 cm –1 are observed, respectively. They are characteristic of sp 2 -hybridized carbon atoms, which seems to be coherent with the findings from RBS/NRA, indicating a higher degree of contamination . As marked in Figure b, an additional Raman line at about 870 cm –1 is only present in the paramagnetic phase for the linearly co-polarized configuration ( E⃗ i ∥ E⃗ s ).…”

Section: Resultssupporting

confidence: 82%

Ferromagnetic Europium Sulfide Thin Films: Influence of Precursors on Magneto-Optical Properties

et al. 2021

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Europium sulfide (EuS) thin films are appealing as ferromagnetic semiconductors and luminescent and optomagnetic materials owing to their unique functional properties. With the emerging field of spintronics and magneto-optical devices, chemical vapor deposition (CVD) offers a versatile platform to tune the material properties and the method to fabricate device structures needed for such applications. Herein, we report the growth of high-quality cubic EuS via a versatile CVD process where the new Eu(III) precursors employed facilitate the formation of the target EuS layers under moderated process conditions. Based on the prior evaluation of the physicochemical properties of these precursors using thermal analysis and density functional theory studies, adequate volatility, thermal stability, and sufficient reactivity toward potential co-reactants, namely, elemental sulfur, could be inferred. Thus, the use of toxic hydrogen sulfide generally needed for sulfide film depositions could be avoided, which is a significant advantage in terms of simplifying the deposition process. The as-deposited thin films were analyzed in terms of the structure, composition, and morphology, revealing highly oriented polycrystalline and stoichiometric EuS films. UV/vis measurements yielded a band gap of around 1.6 eV, and Raman spectroscopy exhibited a coupling between the phonons and electron spin systems of EuS. These findings, together with the soft ferromagnetic character of the films derived from semiconducting quantum interference device measurements, signify the potential of CVD-grown EuS for future technological applications.

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Section: Resultssupporting

confidence: 82%