Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range

Ishibashi, Koji; Ninomiya, S.; Yumiyama, Toshio; Ochi, Akihiro; Funai, Akira; Kabasawa, M.; Tsukihara, Mitsukuni; Ueno, Kazuyoshi

doi:10.1109/iit.2016.7882883

Cited by 1 publication

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When performing the TRIM simulation, two layers of SiO 2 and Si targets were used for the calculation. The density of the SiO 2 layer was set at 2.097 g/cm 3 . The calculated distribution shifted in the surface direction by a depth length equal to the thickness of the SiO 2 layer.…”

Section: Results Of Ultra-high-energy Implantationmentioning

confidence: 99%

“…The density of SiO 2 varies to some extent, depending on the synthesis process. In this TRIM calculation, the density of SiO 2 was set at 2.097 g/cm 3 , which reproduced all the SIMS profiles obtained in this study. Therefore, the thickness of the oxide layer can be estimated to obtain the required surface impurity concentration by TRIM simulation if the SiO 2 density is appropriately set.…”

Section: Discussionmentioning

confidence: 99%

“…The ability to measure the sheet resistance allows a direct evaluation of the implanted dose and uniformity, even at high implantation energies. The Thermal Wave (TW) [3] is a similar evaluation method. The TW method estimates the crystal-defect fraction of the silicon wafer using laser reflectivity, which is correlated with the implanted dose.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sheet resistance measurement for ultra-high energy ion implantation

Sasaki

Sakaguchi²,

Kawasaki³

2022

MRS Advances

View full text Add to dashboard Cite

Ion implanters require high energy to improve the light sensitivity of advanced image sensors with deep photodiode structures. Although high energy ion implanters enable deep implantation, the conditions near the wafer surface may differ from those in shallow implantation. As the implantation energy increases, the dopant ions are implanted deeper into the wafer. Consequently, the conventional four-point probe tools are inappropriate for measuring the electrical sheet resistance of the wafer. As an alternative, a sacrificial oxide layer is applied to the wafer surface and then removed after ion implantation, which allows measuring the sheet resistance of such wafers.

show abstract

Section: Results Of Ultra-high-energy Implantationmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation