2023
DOI: 10.1089/soro.2021.0186
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Intentional Blocking Based Photoelectric Soft Pressure Sensor with High Sensitivity and Stability

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Cited by 15 publications
(8 citation statements)
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“…Like a porous polymer, fiber or fabric-based sensors with their deformable dimensions would greatly improve their sensing performance based on piezoresistive mechanisms. 30–32 Additionally, microstructures such as pyramids, 33–36 hemispheres, 37–40 etc. , constructed on a flexible sensing substrate surface have been reported to contribute to their sensitivity.…”
Section: Resultsmentioning
confidence: 99%
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“…Like a porous polymer, fiber or fabric-based sensors with their deformable dimensions would greatly improve their sensing performance based on piezoresistive mechanisms. 30–32 Additionally, microstructures such as pyramids, 33–36 hemispheres, 37–40 etc. , constructed on a flexible sensing substrate surface have been reported to contribute to their sensitivity.…”
Section: Resultsmentioning
confidence: 99%
“…Like a porous polymer, ber or fabric-based sensors with their deformable dimensions would greatly improve their sensing performance based on piezoresistive mechanisms. [30][31][32] Additionally, microstructures such as pyramids, [33][34][35][36] hemispheres, 37-40 etc., constructed on a exible sensing substrate surface have been reported to contribute to their sensitivity. Unlike hydrogels with so microstructures, stiff microstructures with a higher modulus than the matrix can not only maintain a stable form under pressure but also enable rapid and immediate transmission of sensing information to the matrix, resulting in a rapid response.…”
Section: Sugar-plastic Technology and The Surface Microstructurementioning
confidence: 99%
“…The resistivity is usually determined by the material of resistance, and it is also affected by the temperature. From the perspective of the resistance definition equation, the resistance of a sensor is dependent on Off-electronic ITO/PEDOT:PSS 5 nF kPa −1 (0−5 kPa) 0.15 nF kPa −1 (10−30 kPa) / Submillisecond >10 000 [50] Field-effect transistor TFT 18.96 kPa −1 (<1 kPa) 2.07 kPa −1 (5−40 kPa) / / / [ 51] Photoelectric effect Light-emitting diode 48.07 kPa −1 (0−120 kPa) 0.8 Pa / 12 130 [52] the conductive material of the sensor, its length, and its effective contact area. Its magnitude exhibits an inverse correlation with the material's cross-sectional area A while demonstrating a direct proportionality to both the resistivity and the length L. For instance, Chen [38] et al prepared an enhanced wavy microfluidic flexible piezoresistive sensor by extending the length of the microfluidic channel; He [39] et al prepared a flexible pressure sensor and showed that the increase in the contact area of its conductive material PDMS/Gr with the electrodes helps to improve the sensitivity across a broad pressure range, as shown in Figure 3a,b.…”
Section: Piezoresistivementioning
confidence: 99%
“…The amount of pressure applied to the sensor can be inferred by measuring the change of current. Li [ 52 ] et al. prepared an optoelectronic pressure sensor based on intentional blocking.…”
Section: Materials and Fabricationmentioning
confidence: 99%
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