Intensity-dependent energy and line shape variation of donor–acceptor-pair bands in ZnSe:N at different compensation levels

Bäume, P.; Gutowski, J.; Wiesmann, D.; Heitz, R.; Hoffmann, A.; Kurtz, E.; Hommel, D.; Landwehr, G.

doi:10.1063/1.114566

Cited by 50 publications

(23 citation statements)

References 8 publications

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“…However, similar blue shifts might also be caused by the screening of band potential fluctuations, which are related to randomly distributed charged impurities, as, e.g. discussed for ZnSe [17]. As we pointed out in previous publications, our weakly n-type crystals are highly compensated and thus, the number of charged impurities is in fact very large.…”

Section: Recombination Mechanism Of the Vl A Bandmentioning

confidence: 89%

Ultraviolet luminescence in AlN

Schulz

Albrecht

Irmscher

et al. 2011

Physica Status Solidi (b)

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The defect related luminescence in the near UV region between 3 and 4 eV has been investigated in insulating, n-type and irradiation damaged AlN. A single luminescence band around 3.3 eV with a full width at half maximum of more than 500 meV, is attributed to a donor-acceptor pair transition at low temperatures. The substantial linewidth and a Stokes shift of around 1.3 eV result from strong electron-phonon coupling of the deep acceptor. While the chemical nature of the donor remains ambiguous, the acceptor species is attributed to the isolated Al vacancy, i.e. V 3ÀAl . This luminescence band might be interesting for studying n-type compensation mechanisms in AlN.

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Section: Recombination Mechanism Of the Vl A Bandmentioning

confidence: 89%

Ultraviolet luminescence in AlN

Schulz

Albrecht

Irmscher

et al. 2011

Physica Status Solidi (b)

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“…by unintentional dopants and structural defects in p-doped GaN, 17,18 which still drastically limit today's device performance, have not been fully understood as in more matured systems such as ZnSe 19,20 or CdS. 2,3,21 Studying the luminescence traces of Mg doped GaN with different compensation, doping and strain levels 22,23 has been proven as an effective tool for improving the growth procedures themselves but has also raised general questions concerning the twofold occurrence and stability 24 of acceptors in such wide bandgap materials.…”

Section: Introductionmentioning

confidence: 99%

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

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Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

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“…The energy levels of the donors in ZnSe are conditioned by the Zn i defects, and the acceptor centres may be conditioned by O Se or (O Se -D). The features of the luminescence of the DAPs have been studied in several works [23][24][25][26]. In undoped ZnSe crystals, a wide emission band with a maximum at 490 nm is observed as well.…”

Section: X-ray Induced Luminescence Spectra Of Znsementioning

confidence: 99%

Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals

et al. 2016

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This article presents the results of an experimental investigation of the energy spectra of charge carrier traps in undoped high-resistivity ZnSe single crystals. Fourteen peaks were found in the thermostimulated luminescence spectra of the ZnSe samples at temperatures between 8 K and 450 K, and the thermal activation energies of the charge carrier traps were estimated for the most intense peaks. It was found that the energy spectra of the charge carrier traps in ZnSe exhibit oscillatory regularity, and the energy of a vibrational quantum was estimated to be ω = 206 cm −1 , which is in good agreement with the vibrational mode in the Raman spectrum. Additionally, a linear relationship was observed between the thermal activation energies of the charge carrier traps and the temperature positions of the maxima in the thermostimulated luminescence of ZnSe.

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Intensity-dependent energy and line shape variation of donor–acceptor-pair bands in ZnSe:N at different compensation levels

Cited by 50 publications

References 8 publications

Ultraviolet luminescence in AlN

Ultraviolet luminescence in AlN

Optical signature of Mg-doped GaN: Transfer processes

Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals

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