2015
DOI: 10.1016/j.cep.2015.02.006
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Intensification of falling film melt crystallization process through micro and milli-structured surfaces

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Cited by 9 publications
(5 citation statements)
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“…According to the principle of the thermal-electrical analogy, the overall resistance of the liquid melt, R L , is calculated using Equation (12). Considering the crystal layer slice as a continuous phase, the heat resistance of the crystal phase R C is given by Equation (13), where λ c represents the thermal conductivity of the solid phase.…”
Section: Thermal Property Parametersmentioning
confidence: 99%
See 1 more Smart Citation
“…According to the principle of the thermal-electrical analogy, the overall resistance of the liquid melt, R L , is calculated using Equation (12). Considering the crystal layer slice as a continuous phase, the heat resistance of the crystal phase R C is given by Equation (13), where λ c represents the thermal conductivity of the solid phase.…”
Section: Thermal Property Parametersmentioning
confidence: 99%
“…Wang et al 12 proposed a new type of countercurrent melt crystallizer with a multistage sieve plate and discussed several key factors in the separation efficiency, including the stirring rate and settling velocity of the crystal particles. Mostefa et al 13 designed micro-and milli-structured surfaces of crystallizers to intensify heat and mass transfer. Other intensification pathways, including technique coupling, crystallizer surface modification, crystal seed optimization, and bubble-induced crystallization, have been reviewed by Shen et al 2 Solute transfer and impurity migration directly determine the separation efficiency of the LMC.…”
Section: Introductionmentioning
confidence: 99%
“… 9 14 In static melt crystallization, because of no mixing device, the melt growth is only caused by natural convection. 15 However, in the process of dynamic falling film crystallization and suspension crystallization, the crystal grows from the well-mixed melt caused by stirring or pumping, leading to high-quality transportation of the crystal surface and the impurities into the melt. 16 Therefore, compared with the static process, the dynamic process has a higher separation efficiency when the crystal growth rate is similar or even faster.…”
Section: Introductionmentioning
confidence: 99%
“…Accordingly, the melt crystallization method, which includes static melt crystallization, dynamic falling film melt crystallization, and suspension crystallization, has the advantages of high product purity, energy saving, and low requirements in equipment, was especially suitable for the separation of the heat-sensitive mixtures with similar boiling points. In static melt crystallization, because of no mixing device, the melt growth is only caused by natural convection . However, in the process of dynamic falling film crystallization and suspension crystallization, the crystal grows from the well-mixed melt caused by stirring or pumping, leading to high-quality transportation of the crystal surface and the impurities into the melt .…”
Section: Introductionmentioning
confidence: 99%
“…Due to the close boiling points between AA (141 • C) and PA (141.15 • C), it is usually difficult to separate them by distillation. In recent years, melt crystallization has been applied to separate AA from melt with impurity PA [19][20][21]. To elucidate the influence of process parameters on the effective distribution coefficient, the objective of this study is to investigate the dependence of the effective distribution coefficient on the initial impurity concentration and layer growth rate for AA melt with PA as an impurity for industrial applications.…”
Section: Introductionmentioning
confidence: 99%