Intense terahertz emission from a-plane InN surface

Abstract

We report a significant enhancement in terahertz emission from the indium nitride ͑InN͒ films grown along the a axis ͑a-plane InN͒, relative to the InN films grown along the c axis. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a axis, which effectively enhances the geometrical coupling of the radiation out of semiconductor. In addition, azimuthal angle dependence measurement shows that the p-polarized terahertz output consists of a large angularly independent component and a weak component with a distinctive fourfold rotation symmetry.

Alternative precursors for MOVPE growth of InN and GaN at low temperature

“…InN offers a huge range of applications addressing as well terahertz [2], solar cells [3] than the 1.55 mm telecommunication field [4]. The full nitride technology perspective associated to successful achievement of InN and In-rich nitride alloys is the interesting key point motivating the worldwide nitride scientific community.…”

Terahertz emission mechanism of magnesium doped indium nitride

“…Due to its extremely low probability of intervalley scattering and strong intrinsic electric field, InN has received much attention in terahertz range applications. [5][6][7][8][9][10][11] Typically, as-grown InN film is unintentionally doped n-type and terahertz emission from the undoped InN is much weaker than that from InAs due to large screening from high intrinsic carrier density. Doping InN with proper acceptors, such as Mg, is expected to reduce the carrier density and enhance the radiation intensity.…”

MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

“…In 2008, Wu [5] indicated the absence of Fermi-Level Pinning on in situ cleaved a-plane InN surfaces. At the same year, significantly enhanced terahertz emission from a-plane InN relative to c-plane InN was found [6].…”