Intense photoluminescence from laterally anodized porous Si

Abstract

We have studied photoluminescence (PL) from porous Si anodized laterally along the length of the Si wafer. Broad PL peaks were observed with peak intensities at ∼640 to 720 nm. Strong PL intensity could be observed from 550 to 860 nm. Room-temperature peak intensities were within an order of magnitude of peak intensities of AlGaAs/GaAs multi-quantum wells taken at 4.2 K, and total intensities were comparable. A blue shift of peak intensities from ∼680 to 620 nm could be observed after thermal anneal at 500 °C in O2 and subsequent HF dip.

Photoluminescence in Si/ZnO nanocomposites

“…Since the initial work of Canham [1] on porous Si prepared by anodization of Si wafers, several workers have reported their experimental results on the fabrication methods [2][3][4], structural characterization [5,6] and optical properties [7][8][9] of nano-and micro-crystals. The PL properties of Si [7,10] and Ge [11] prepared by various methods have also been reported.…”

Visible Light Emission from Porous Silicon

“…The material was considered as an isolation dielectric in integrated circuits some time ago [2]. Recently, photoluminescence in the near-infrared [3] and later intense luminescence in the visible range of the spectum [4] have been reported for porous silicon. The discovery that porous silicon can emit visible light at room temperature has once again generated a worldwide interest in this material.…”

Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

“…The area of Si nanocrystals is currently one of the most active frontiers in physics and chemistry. Si nanocrystals have been synthesized by several techniques, such as microwave-or laserinduced decomposition of silanelike precursors, 2,6 ion implantation of Si ϩ , 7,8 electrochemical etching of Si wafers, 9,10 and pulsed-laser deposition ͑PLD͒ of Si. 11,12 Among them, PLD is one of the most flexible and promising techniques due to its ability to control the size and distribution of nanocrystals and maintain crystal purity in a cold-wall processing ambient.…”