Intense erbium-1.54-μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC

Choyke, W. J.; Devaty, Robert P.; Clemen, L. L.; Yoganathan, M.; Pensl, Gerhard; Häßler, C.

doi:10.1063/1.112908

Cited by 79 publications

(28 citation statements)

References 10 publications

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“…All these observations point to the necessity to use wide band gap semiconductors, like SiC, GaN, AlN, etc., as hosts, to receive the efficient 4f-4f (879) emission of Er3+ ions at 300 K [1]. This conclusion was confirmed, i.e., by Choyke et al [6] who showed that the integrated 4f -4f PL intensity of Er3+ from 1.49 μm to 1.64 μm in different SiC polytypes is almost constant up to about 400 K.…”

supporting

confidence: 74%

“…It suggests that they are due to the radiative transitions from the excited levels of the 4Ι13 / 2 multiplet. The integrated PL intensity from 1.5 to 1.6 μm remains constant up to 200 K. At temperatures above 200 K the intemsity decreases and at room temperature it is by a factor of 2 lower than at 1.4 K, in some disagreement with the results of Choyke et al [6] and Yoganathan et al [7].…”

contrasting

confidence: 51%

“…The spectra presented in Fig. 1 are the sane like those presented in papers [6] and [7], in spite of the different implant and annealing conditions, suggesting the same structure of the emitting centres. With respect to our observation they are most probably complexes involving erbium and oxygen atoms.…”

supporting

confidence: 50%

“…There are two major differences in the experimental conditions in this work and in experiments of Choyke et al [6], and Yoganathan et al [7]: in our work the maximum annealing temperature was 15000C, in comparison with 17000C used by them. Therefore the concentration of residual defects which may act as nonradiative recombination centres is probably much higher in our samples.…”

mentioning

confidence: 61%

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Infrared Luminescence in Er and Er+O Implanted 6H SiC

Kozanecki¹,

Jantsch²,

Heis³

et al. 1997

Acta Phys. Pol. A

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Photoluminescence in the neighbourhood of 1.54 μm due to the 4l13/2 -4 I15/2 intra-4f-shell transitions of Er3+ ions in 6Η SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing.PACS numbers: 61.72. Ww, The research interest in erbium doped semiconductors is growing rapidly [1], because Er3+ ions exhibit luminescence around 1.54 μm originating in the 4/i3/2 -4 Ι 1 5 / 2 e l e c t r o n i c t r a n s i t i o n s w i t h i n t h e 4 f s h e l l . T h i s w a v e l e n g t h c o r r e s p o n d s t o the minimum absorption of silica-based fibers, making Er-doped light sources and amplifiers promising for applications in optical telecommunications.While many Er-doped semiconductors have been studied to date, only a few reveal 1.54 μm emission at 300 K. Favennec et al. [2] have observed that the quenching processes of the 4f-4f photoluminescence (PL) of Er3+ ions become less effective with the increase of the semiconductor band gap. Attempts to increase the emission efficiency of erbium in Si and GaAs with oxygen codoping were quite successful [3][4][5], however, the intensity of light from Er+O doped Si and GaAs electroluminescent diodes has been still too low for any practical applications. Once again the relatively narrow band gaps of semiconductors, particularly in case of Si, appeared to be the dominant parameter affecting excitation and relaxation of the 4f-shell. All these observations point to the necessity to use wide band gap semiconductors, like SiC, GaN, AlN, etc., as hosts, to receive the efficient 4f-4f (879)

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supporting

confidence: 74%

contrasting

confidence: 51%

supporting

confidence: 50%

mentioning

confidence: 61%

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Infrared Luminescence in Er and Er+O Implanted 6H SiC

Kozanecki¹,

Jantsch²,

Heis³

et al. 1997

Acta Phys. Pol. A

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“…Examples of other RE-doped wide band gap semiconductors ͑WBGS͒ which have been reported include GaP, 1 SiC, 2 and III-V compounds. 3 Advantages of WBGS over other semiconductors and glasses include chemical stability, carrier generation ͑to excite the rare earths͒, and physical stability over a wide temperature range.…”

mentioning

confidence: 99%

Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates

Birkhahn¹,

Hudgins²,

Lee³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources ͑for Ga, Al, and Er͒ and a plasma gas source for N 2 . The emission spectrum of the GaN:Er films consists of two unique narrow green lines at 537 and 558 nm along with typical Er 3ϩ emission in the infrared at 1.5 m. The narrow lines have been identified as Er 3ϩ transitions from the 2 H 11/2 and 4 S 3/2 levels to the 4 I 15/2 ground state. The morphology of the GaN:Er films showed that the growth resulted in either a columnar or more compact structure with no effect on green light emission intensity. © 1999 American Vacuum Society. ͓S0734-211X͑99͒06303-9͔The optical properties of rare earth ͑RE͒ elements ͑such as Nd, Er, Pr͒ have led to many important photonic applications, including solid state lasers, telecommunications ͑opti-cal fiber amplifiers, fiber lasers͒, optical storage devices, displays. In most of these applications the host materials for the REs were various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared ͑IR͒ wavelengths depending on the electronic transitions of the selected RE element and the excitation mechanism. Semiconductors doped with REs such as Pr and Er have exhibited only the lowest excited state as an optically active transition. However, the presence of these transitions at IR wavelengths ͑1.3 and 1.54 m͒ coincident with minima in the optical loss of silica-based glass fibers utilized in telecommunications combined with the prospect of integration with semiconductor device technology has sparked considerable interest.The III-N semiconducting compounds are of particular interest as hosts for REs because of their direct band gap and high level of optical activity even under conditions of rather high defect density, which would quench emission in other smaller-gap III-V and wide-gap II-VI compounds. Examples of other RE-doped wide band gap semiconductors ͑WBGS͒ which have been reported include GaP, 1 SiC, 2 and III-V compounds.3 Advantages of WBGS over other semiconductors and glasses include chemical stability, carrier generation ͑to excite the rare earths͒, and physical stability over a wide temperature range. The doping of III nitrides ͑GaN, AlN͒ with Er by molecular beam epitaxy ͑MBE͒ and metal-organic chemical vapor deposition ͑MOCVD͒ both during growth and postgrowth by ion implantation has been reported. [4][5][6][7][8][9][10][11] The successful in situ incorporation 12-14 of Er into AlN and GaN by MBE and its IR emission characteristics have been reported by other groups. None of these articles in the literature report emission in the visible range from Er-doped III-nitrides. Recently, our group has reported 15-18 the in situ incorporation of Er into GaN by MBE on both sapphire and silicon leading to room temperature visible and IR emission b...

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Optical Characterization of Silicon Carbide Polytypes

Devaty

Choyke

1997

phys. stat. sol. (a)

106

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This article is a review of recent progress in our understanding of the optical properties of the important polytypes of SiC: 3C, 4H, 6H, and 15R. We focus on experimental work but also compare results obtained by experiment with theory. The topics of emphasis are: 1. vacuum ultraviolet reflectivity, 2. free excitons, 3. spectroscopy of shallow donors and acceptors, 4. the impurity boron in SiC, 5. the rare earth impurity erbium in SiC, and 6. optical properties of porous SiC.

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Intense erbium-1.54-μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R, and 3C SiC

Cited by 79 publications

References 10 publications

Infrared Luminescence in Er and Er+O Implanted 6H SiC

Infrared Luminescence in Er and Er+O Implanted 6H SiC

Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates

Optical Characterization of Silicon Carbide Polytypes

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