Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Lee, Hyung‐Jin; Callender, Steven; Rami, Said; Shin, Woorim; Yu, Qiang; Marulanda, Jose Mauricio

doi:10.1109/cicc48029.2020.9075914

Cited by 28 publications

(8 citation statements)

References 19 publications

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“…An additional reliability concern is degradation caused by applying a high voltage at the drain side of the device, the so-called hot carrier degradation (HCD). While HCD in silicon FETs is among the central reliability concerns in scaled devices 71 , only very little is known about HCD in 2D material-based devices 72 but might be fundamental for functionalised 2D materials or hydrogenpassivated edges, as these bonds could be susceptible for hot carrier triggered dissociation.…”

Section: D Fet Electrical Characterizationmentioning

confidence: 99%

“…2) ALD process modifications 22,112,113 ; 3) buffer/seeding layers 63,[114][115][116][117] ; and 4) transferred or transformed films 71,74,103,[118][119][120] . For surface treatments, the premise is to generate reactive sites on the otherwise inert basal plane, either by intentionally generating defects or by adding adsorbents.…”

Section: Scale Lengthmentioning

confidence: 99%

“…The last general approach to realizing a scalable high-k dielectric on inert 2D surfaces is by using transferred or transformed films. Most common is hBN 118 , though other options are emerging, such as MoO3 120 , GaS 71 , and CaF2 63 . Compelling demonstrations of "all-2D" transistors have come from these transferred-film approaches 119,122 .…”

Section: Scale Lengthmentioning

confidence: 99%

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Transistors based on two-dimensional materials for future integrated circuits

et al. 2021

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Field-effect transistors based on two-dimensional materials could potentially be used in very large-scale integration (VLSI) technology. But whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be seen. In order to achieve this, multiple challenges must be overcome including reducing contact resistance, developing stable and controllable doping schemes, advancing mobility engineering, and improving high-k dielectric integration. The large-area growth of uniform 2D layers is also required to ensure low defect density, low device-to-device variation, and clean interfaces. Here we review the development of 2D field-effect transistors for use in future VLSI technologies. We consider the key performance indicators for aggressively scaled 2D transistors and discuss how these should be extracted and reported.We also highlight potential applications of 2D transistors in conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage, and future interconnect technologies.

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Section: D Fet Electrical Characterizationmentioning

confidence: 99%

Section: Scale Lengthmentioning

confidence: 99%

Section: Scale Lengthmentioning

confidence: 99%

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Transistors based on two-dimensional materials for future integrated circuits

et al. 2021

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“…Silicon-integrated technologies such as CMOS and SiGe BiCMOS are outlined [1] as a low-cost solution for mass-market THz systems that require large integration levels, which is further supported by an approximate tripling in the number of yearly silicon-based THz publications listed on IEEE Xplore during the past decade [2]. Current research has been able to maximise the f T /f max of CMOS technologies [3] to around 0.3/0.45 THz and SiGe BiCMOS [4] to 0.3/0.5 THz with individual SiGe HBTs achieving f T /f max of 0.505/0.72 THz [5].…”

Section: Introductionmentioning

confidence: 99%

A 1.42-mm² 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

Mangiavillano

Kaineder

Aufinger

et al. 2022

IEEE Trans. THz Sci. Technol.

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Terahertz frequency-modulated continuous-wave (FMCW) radars operating close to and beyond fmax often use gain-enhancing lenses to improve the signal-to-noise ratio. A compact single-chip transceiver benefits a lot from the alignment of the lens to the single on-chip antenna in a monostatic system. The typically required coupler for monostatic operation adds an insertion loss. The proposed multiply-by-24 frequency multiplier-based FMCW radar transceiver removes the coupler and integrates both the final 0.48-THz doubler and subharmonic downconverter into a single common collector push-push doubler. The common emitter is the only port at 0.48 THz in this monostatic system, feeding the top-metal on-chip patch antenna using a direct via stack. The 1.42-mm 2 monostatic FMCW radar transceiver, manufactured in a 90-nm SiGe BiCMOS technology with an fT/fmax of 300/480 GHz consumes 85 mA when connected to a 3.3-V supply. At 0.48 THz, the output power is −12 dBm and the single-sideband noise figure is measured as 36.3 dB. FMCW radar measurements with operating bandwidths of up to 55 GHz, corresponding to a theoretical range resolution of 2.73 mm are performed using an on-board frequency source of a credit card-sized demonstrator.

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“…The foreseen transition to 6G communication systems (and beyond) calls for increased operation frequency and bandwidth along with reduced power dissipation and high efficiency, opening the way to the exploitation of new technologies and devices. Both Si nanotechnologies (e.g., CMOS and FinFETs [1][2][3][4]) and III-V-based technologies (GaAs and GaN PHEMTs [5][6][7]) have been continuously optimized for RF/microwave applications to cover the requirements of next generation communication systems, targeting either higher power density for the deployment of the wireless backbone [8], or extremely high operating frequencies to exploit their inherent wideband capability, or both. In analog high-frequency applications, though, the technological quality turns out to be the key for a successful deployment of microwave stages such as power amplifiers (PAs) or mixers [9].…”

Section: Introductionmentioning

confidence: 99%

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

et al. 2022

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Process-induced variability is a growing concern in the design of analog circuits, and in particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G communication systems. The RF and microwave (MW) technologies developed for the deployment of these communication systems exploit devices whose dimension is now well below 100 nm, featuring an increasing variability due to the fabrication process tolerances and the inherent statistical behavior of matter at the nanoscale. In this scenario, variability analysis must be incorporated into circuit design and optimization, with ad hoc models retaining a direct link to the fabrication process and addressing typical MMIC nonlinear applications like power amplification and frequency mixing. This paper presents a flexible procedure to extract black-box models from accurate physics-based simulations, namely TCAD analysis of the active devices and EM simulations for the passive structures, incorporating the dependence on the most relevant fabrication process parameters. We discuss several approaches to extract these models and compare them to highlight their features, both in terms of accuracy and of ease of extraction. We detail how these models can be implemented into EDA tools typically used for RF and MMIC design, allowing for fast and accurate statistical and yield analysis. We demonstrate the proposed approaches extracting the black-box models for the building blocks of a power amplifier in a GaAs technology for X-band applications.

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Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Cited by 28 publications

References 19 publications

Transistors based on two-dimensional materials for future integrated circuits

Transistors based on two-dimensional materials for future integrated circuits

A 1.42-mm² 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

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Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Cited by 28 publications

References 19 publications

Transistors based on two-dimensional materials for future integrated circuits

Transistors based on two-dimensional materials for future integrated circuits

A 1.42-mm2 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

Contact Info

Product

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A 1.42-mm² 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS