2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) 2017
DOI: 10.1109/edssc.2017.8126536
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Integration scheme for retention-aware DRAM refresh

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Cited by 2 publications
(4 citation statements)
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“…In research [5], in addition to all-bank refresh and per-bank refresh, two new fine-granularity refresh schemes, namely half-bank refresh, and quarter-bank refresh were proposed to further reduce unnecessary refresh. Although this integration refresh scheme combined both the advantage of all-bank refresh and per-bank refresh, provided fine-granularity refresh modes selection to resolve the problem of too much unnecessary refresh in all-bank refresh and high refresh overhead in per-bank refresh, it did not integrate the 2x granularity auto-refresh and hence the performance improvement was less than 10%.…”
Section: Motivation and Examplementioning
confidence: 99%
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“…In research [5], in addition to all-bank refresh and per-bank refresh, two new fine-granularity refresh schemes, namely half-bank refresh, and quarter-bank refresh were proposed to further reduce unnecessary refresh. Although this integration refresh scheme combined both the advantage of all-bank refresh and per-bank refresh, provided fine-granularity refresh modes selection to resolve the problem of too much unnecessary refresh in all-bank refresh and high refresh overhead in per-bank refresh, it did not integrate the 2x granularity auto-refresh and hence the performance improvement was less than 10%.…”
Section: Motivation and Examplementioning
confidence: 99%
“…There has been some research on reducing the overhead of DRAM by retention-aware refresh or refresh scheduling [3,4,5,6,7,8,9,10,11,12]. Research [4] proposed a RAAR technique to reduce refresh energy and performance degradation, only part of refresh bundles need a refresh in each refresh interval, while other refresh bundles can skip at least 50% of refresh operations.…”
Section: Introductionmentioning
confidence: 99%
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