Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Alper, M.; Tecimer, Habibe Uslu; Tan, Serhat Orkun; Altındal, Ş.

doi:10.1007/s00289-018-2274-5

Cited by 21 publications

(6 citation statements)

References 34 publications

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“…Some clues for elucidation of the physical processes that are responsible for the J r and J nr discrepancies between P-QLEDs and C-QLEDs are contained in the parameter values in table 1. For example, unusually large ideality factors for both devices indicates that barrier-height effects and/or defect-related losses significantly affect the performance of these devices [42][43][44]. Specifically, the reduction of n nr from 19.0 to 12.8, which is responsible for the noticeable increase of J nr in spite of a three-fold decrease in pre-exponential factor J 0,nr (from 1.11×10 -8 to 3.58×10 -9 mA cm −2 ), can be attributed to the reduction of barrier heights due to a Fermi level shift and concomitant passivation of mid-gap defect states as a result of Cs 2 CO 3 treatment.…”

Section: Resultsmentioning

confidence: 99%

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs₂CO₃ solution treatment

Nguyen¹,

Ryu²,

Duong³

et al. 2021

Nanotechnology

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We report a five-fold luminance increase of green-light-emitting CdSe@ZnS quantum-dot LEDs (QLEDs) in response to treatment with a 2-ethoxyethanol solution of cesium carbonate (Cs2CO3). The maximum luminous yield of Cs2CO3-treated QLED is as high as 3.41 cd A−1 at 6.4 V. To elucidate device-performance improvement, we model measured currents as the sum of radiative and non-radiative recombination components, which are respectively represented by modified Shockley equations. Variations in model parameters show that a shift in Fermi level, reduction of barrier heights, and passivation of mid-gap defect states are the main results of Cs2CO3 treatment. In spite of a large luminance difference, light-extraction efficiency remains the same at 9% regardless of Cs2CO3 treatment because of the similarity in optical structures.

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Section: Resultsmentioning

confidence: 99%

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs₂CO₃ solution treatment

Nguyen¹,

Ryu²,

Duong³

et al. 2021

Nanotechnology

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“…Φ b is effective barrier height. The value n is calculated from the slope of the semi-logarithmic I-V graphs obtained [39][40][41][42][43][44][45][46][47][48].…”

Section: Resultsmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

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In this work, the impact of gamma-ray irradiation (γ) on graphene/Al 2 O 3 /p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V ) analyses of the structure exposed to gamma radiation have been carried out. I-V measurements have been made between −3 V and 3 V to analyze electrical properties of the graphene/Al 2 O 3 /p-type Si before and after 60 Co γirradiation. I-V measurements of the structure have been made at the range of 300 K-405 K. Thermionic emission (TE) theory and Cheung's methods have been used to examine the electrical features of the structure. The discrimination of all experimental results has been done by using Principal Component Analysis (PCA). In PCA analysis, the first two principal components (PC1=75.6% and PC2=20.9%) accounted for 96.5% of the variance, which is a very good result.

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“…The resistance and doped-polymer interlayer are essential components of the MPS structure. Because both the series resistance and the depletion layer share the total voltage applied to the structures (Tecimer et al, 2018). As a result, the quality of the interlayer and the series resistance were an essential impact on the dependability and usefulness of these devices (Zeyrek et al, 2013).…”

Section: Introductionmentioning

confidence: 99%

Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure

ALSMAEL>

URGUN>

Tan

et al. 2022

Gazi University Journal of Science Part A: Engineering and Innovation

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Voltage and frequency dependent of capacitance and conductivity versus voltage (C&G/ω–V) qualifications of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative capacitance (NC) is a phenomenon that occurs at low frequencies and is primarily caused by minority carrier injection, series resistance (Rs), and surface states (Nss). Because of the specific density distribution and relaxation times of Nss, NC acts different behavior at lower and higher frequency levels and loses its effectiveness with increasing frequency. Also, the fluctuations in C and G/ω were ascribed to doping concentration, surface states loss charges, and interlayer thickness. Nss was acquired using the low-high frequency capacitance method (CLF-CHF), and the forward biased C−2 vs V graphs (at 10 kHz to 1 MHz) were used to determine the Fermi level (EF), barrier height (ΦB), and concentration of doped acceptor atoms (NA). Accordingly, it has been detected that C and G/ω are highly dependence on biases and frequencies. Then again, the polarizations and surface states effect are barely perceptible at extremely higher frequency levels. Thus, polarization and Rs stand out as important parameters that should be taken into account when examining the basic parameters of electronic devices.

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Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Cited by 21 publications

References 34 publications

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs₂CO₃ solution treatment

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs₂CO₃ solution treatment

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure

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Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes

Cited by 21 publications

References 34 publications

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs2CO3 solution treatment

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs2CO3 solution treatment

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure

Contact Info

Product

Resources

About

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs₂CO₃ solution treatment

Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a Cs₂CO₃ solution treatment

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure