The emergence of strong-field nanoplasmonics brings extreme laser field-matter interaction into the realm of nanoscale science, unveiling exciting new physics. Highly nonlinear interaction is enabled by tightly confined electric fields in nanoplasmonic structures, permitting use of optical fields from low-power laser oscillators. Here, we report the first demonstration of visible 517nm third harmonic generation in ultracompact nanoplasmonic waveguides on a silicon-on-insulator platform at an unprecedented conversion efficiency of ~10 -5 . Exponential growth of broadband white light generation confirms a new strong-field phenomenon of ponderomotive force-driven electron avalanche multiplication. Using time-resolved experiments, we show that the strong nanoplasmonic field confinement allows nonlinear interaction to occur on an ultrafast timescale of 1.98 ± 0.40 ps, despite the long free-carrier lifetime in silicon. These findings uncover a new strong-field interaction that can be used in sensitive nanoplasmonic modulators and hybrid plasmonic-electronic transducers.fibre optics and chip-scale waveguides enabled high electromagnetic intensities to be maintained over long interaction lengths, generating pronounced nonlinear signatures 9,10 .Amassing strong nonlinear signatures over short interaction lengths and at low input power has proven challenging, yet such devices are important elements of nextgeneration integrated optical nanocircuitry. Subwavelength confinement, electric field enhancement, and high sensitivity provided by nanoplasmonic structures make them excellent candidates for compact, all-optical circuitry with gate speeds exceeding those of conventional electronics by orders of magnitude. Furthermore, nanoplasmonic circuitry operating in the telecommunications band on a silicon-based platform would enable monolithic integration with electronic and silicon photonics technologies 11 .Indispensable in the electronics industry, silicon (Si) has accumulated a comprehensive infrastructure of growth and processing techniques that have enabled rapid advances in nanophotonic devices for routing, filtering, buffering, and modulating near-infrared electromagnetic radiation signals 12-14 . Third-order nonlinear effects occurring at the fundamental radiation frequency, χ (3) (ω), including two-photon absorption (TPA) 15,16 , free-carrier absorption (FCA), Raman amplification, 17,18 the optical Kerr effect, four-wave mixing 19,20 , cross-phase modulation 21,22 , and self-phase modulation 23,24 have been studied extensively in silicon-on-insulator (SOI) waveguides.However, third-harmonic generation (THG) has remained elusive in SOI waveguides and has only been observed in a photonic crystal waveguide due to slow light-induced spatial pulse compression. 25 Third-harmonic generation has also been observed in plasmonic nanoparticles, but integration of these particles to optical circuitry has not yet been achieved. [26][27][28] Third-harmonic generation enhanced by strong confinement in a Si-loaded