Integration of Self-Assembled Vertically Aligned Nanocomposite (La_0.7Sr_0.3MnO₃)_1–x:(ZnO)_x Thin Films on Silicon Substrates

Abstract

Epitaxial (La0.7Sr0.3MnO3)(1-x):(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.

Large, Temperature‐Tunable Low‐Field Magnetoresistance in La0.7Sr0.3MnO3:NiO Nanocomposite Films Modulated by Microstructures

“…As expected, the magnetic fi eld dependent out-of plane isothermal MR% of the (LSMO)5:(NiO)5 composite fi lm at 250 K after zero-fi eld cooling (ZFC) process increases rapidly with increasing the applied fi eld. The (LSMO) 5 :(NiO) 5 composite fi lm shows larger MR values at all measured fi elds as compared to the pure LSMO and other composite fi lms, as shown in Figure 7 c. [ 32,60,61 ] This upturn portion of the resitivity has been fi tted by using the Coulomb blockade model: [ 62 ] …”

“…[1][2][3] These GMR materials are particularly interesting as designing the memory-readers of digital device, magnetic sensor, p-n junctions or spintronic applications involving GMR effect with the high-T C superconductivity. [4][5][6][7] However, the intrinsic GMR value in this system can only be triggered at a high magnetic fi eld of several Teslas and within a narrow temperature range, [ 8 ] which obstructed applications such as magnetic head sensors or low-cost magnetic sensors that should be operated at a low magnetic fi eld and stable temperature-sensitive be noted that the addition of second metallic oxide (MO) phase, such as ZnO, [31][32][33][34] V 2 O 3 [ 20 ] and Mn 3 O 4 [ 1 ] etc., may induced selfassemble columnar growth due to a large lattice mismatch with the matrix. [ 30,35,36 ] However, one major challenge for enhancing the LFMR in a high temperature range in the composite fi lms is how to tune the crystalline grain size of the second MO phase.…”

Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying

“…STO is the most established single crystalline substrate for film growth, and is the most promising oxide buffer on Si, the key end-goal substrate for the oxide electronics field [42,43]. We explored a range of compositions across the BTO (or STO)-BFO compositional line.…”

Nanoporous Films and Nanostructure Arrays Created by Selective Dissolution of Water‐Soluble Materials

“…Strontium aluminate (Sr 3 Al 2 O 6 , SAO; space group $Pa\overline{3}$) was used as a water‐soluble material (also referred as water‐soluble phase)8 in our study. In addition to being water‐soluble, SAO has the benefit that its crystal lattice is well‐matched to STO, which is the most promising oxide buffer on silicon, the key end‐goal substrate in the field of electronics 9. A good match between the crystal structure of a film and that of the underlying material is a prerequisite for epitaxial growth.…”