Integration of precision passive components on silicon for performance improvements and miniaturization

Sharma, Upasna; Gee, H.; Liou, D. C.; Holland, Phil; Liu, Rong

doi:10.1109/estc.2008.4684396

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Using Integrated Decoupling Capacitance For 3d Chip Stack1

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2009

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Cited by 6 publications

(2 citation statements)

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“…The decoupling capacitors integrated into the Si substrate can provide high capacitance at low cost (Sharma et al, 2008). The integrated decoupling capacitors are famous for comparatively low effective series resistance and inductance at high frequency.…”

Section: Using Integrated Decoupling Capacitance For 3d Chip Stackmentioning

confidence: 99%

Switching Noise in 3D Power Distribution Networks: An Overview

Ahmad¹,

Tenhunen²

2012

VLSI Design

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Section: Using Integrated Decoupling Capacitance For 3d Chip Stackmentioning

confidence: 99%

Switching Noise in 3D Power Distribution Networks: An Overview

Ahmad¹,

Tenhunen²

2012

VLSI Design

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“…It is a single-channel design with a lower attenuation on the 1800-2600 MHz band. An integrated passive component on silicon was proposed in [8], in which all the integrated passive components were packaged as a Wafer Level Chip Scale Package device. The proposed protection/filter IC is used in cellular microphone applications.…”

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confidence: 99%

Implementation of a Compact EMI Filter Array for 4G-LTE Applications on LTCC

Chen

Lin

2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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In this paper, a mixed type material is described for the first time whereby a fully integrated electromagnetic interference (EMI) filter array in low-temperature co-fired ceramic technology is implemented. To miniaturize the size of the component and have high rejection and low insertion loss, a mixed powder material with a higher permittivity and a lower loss tangent is employed to design and fabricate the filter. The material system used in this paper is BaNd 2 Ti 4 O 12 + Ni-Cu-Zn ferrite. The addition of Bi 2 O 3 reduces the sintering temperature to below 900°C. A compact EMI filter array architecture that has a wide rejection band and sufficient isolation is also introduced. For the development of wireless communications, the spectrum for global 4G-Long Term Evolution (LTE) covers different frequencies within 700-2600 MHz. In this paper, an EMI filter array that rejects unwanted frequencies from 700 to 2700 MHz, which covers all 4G-LTE bands, is presented. The EMI filter array is 1.6 mm (L) × 0.8 mm (W ) × 0.5 mm (H), the smallest reported so far. The measured results of the developed filter are in good agreement with the simulated results by a fullwave electromagnetic simulator.

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