Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells

Kolliopoulou, S.; Dimitrakis, P.; Normand, P.; Zhang, Hao‐Li; Cant, N.; Evans, Stephen D.; Paul, Shashi; Pearson, Christopher; Molloy, A.; Petty, Michael C.; Tsoukalas, D.

doi:10.1016/j.mee.2004.03.042

Cited by 2 publications

(2 citation statements)

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“…In our previous work [10]- [12], we have reported on silicon-based MIS devices and transistor structures in which a monolayer of gold nanoparticles was incorporated into dif- ferent insulating films. Here, we extend our studies to organic MIS memory structures using pentacene as the semiconductor and polymethylmethacrylate (PMMA) as the insulator.…”

Section: Introductionmentioning

confidence: 99%

Charge Storage in Pentacene/Polymethylmethacrylate Memory Devices

Mabrook

Yun

Pearson

et al. 2009

IEEE Electron Device Lett.

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The electrical behavior of organic metal-insulatorsemiconductor (MIS) structures incorporating a layer of selfassembled metallic nanoparticles is described. These have been based on thermally evaporated pentacene (semiconductor) and spin-coated polymethylmethacrylate (insulator). The MIS devices containing the nanoparticles exhibited significant hysteresis in their capacitance-versus-voltage and conductance-versus-voltage characteristics, which was attributed to the charging and discharging of the nanoparticles. The memory structure reported here offers a useful advance in the development of flexible organic memory structures.

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Section: Introductionmentioning

confidence: 99%

Charge Storage in Pentacene/Polymethylmethacrylate Memory Devices

Mabrook

Yun

Pearson

et al. 2009

IEEE Electron Device Lett.

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“…Then, aluminum electrodes as X-Y cross-wires were fabricated by vacuum deposition and between them an active layer was sandwiched (Figure 3) [16] . The active layers can be fabricated through several approaches including vacuum deposition [19] , Langmuir-Blodgett film (LB film) [23] , layer-by-layer self-assembly [24][25][26] and spin-coating [27] . Amongst them, spin-coating is the most frequently used technology, which features facility and stable performances.…”

Section: Figurementioning

confidence: 99%

Memory devices based on organic electric bistable materials

2007

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Organic/metallic composites have demonstrated electrical bistability, as well as memory effects. These advanced materials have shown potential applications in digital information storage because of their good stability, flexibility and fast response speed. The electric bistability phenomenon can be explained by electric field-induced electron transfer/storage. This article reviews the recent progress of memory devices based on organic/metallic and polymeric composites with electric bistability.

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Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells

Cited by 2 publications

References 12 publications

Charge Storage in Pentacene/Polymethylmethacrylate Memory Devices

Charge Storage in Pentacene/Polymethylmethacrylate Memory Devices

Memory devices based on organic electric bistable materials

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