Integration of bulk materials with two-dimensional materials for physical coupling and applications

Bae, Sang Hoon; Kum, Hyun; Kong, Wei; Kim, Yunjo; Choi, Chanyeol; Lee, Byunghun; Lin, Peng; Park, Yongmo; Kim, Jeehwan

doi:10.1038/s41563-019-0335-2

Cited by 227 publications

(189 citation statements)

References 94 publications

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“…Efficient integration of 2D-TMDs with designed nanostructures can be expected to represent a crucial step to ultimately harness their optoelectronic properties for scientific and industrial purposes. Significant progress was made in realizing such hybrid systems consisting of nanostructures and 2D-TMDs during the last few years [76,77]. These integration methods generally can be distinguished into dry methods and wet methods.…”

Section: Integration Approachesmentioning

confidence: 99%

Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures

Mupparapu

Bucher

Staude

2020

Advances in Physics: X

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Integrating transition metal dichalcogenide (TMD) monolayers with dielectric nanostructures exhibiting Mie-like resonances opens a plethora of opportunities in manipulating their excitonic emission in the near-field and far-field regimes, yielding interactions spanning from weak to strong coupling regimes, and routing valley polarized chiral emission, to name just a few. Moreover, there is a completely new path unraveled recently by realizing dielectric resonators directly from TMDs, thus combining scatterer and emitter into a single entity. This hybrid configuration is promising to realize integrated active meta-optical devices in a facile manner. In this review article, we provide an overview of the state of the art on integrating monolayers of TMDs with Mieresonant photonic nanostructures. ARTICLE HISTORY

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Section: Integration Approachesmentioning

confidence: 99%

Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures

Mupparapu

Bucher

Staude

2020

Advances in Physics: X

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“…[16][17] Therefore, there exists an opportunity to combine 2D materials with 3D semiconductors to explore fundamental charge-transport phenomena at their interfaces and exploit them for devices. 18 This approach is particularly appealing since it is easy to transfer 2D vdW layers on 3D surfaces which can in turn help passivate the 3D surface due to the inert chemical nature of the 2D layers, thereby forming an electronically active interface. [7][8] Further, this also opens avenues to vertical integration of more devices on top of a fully fabricated 3D complementary metal-oxide semiconductor (CMOS) platform.…”

Section: Introductionmentioning

confidence: 99%

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Miao

Liu

et al. 2020

Nano Lett.

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Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of "all-2D" vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS 2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS 2 , we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.

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“…Based on the negligible volume of 2D materials, synaptic operation by tens of femtojoule per spike has been realized widely, which is comparable with the energy consumption per spike in biological synapses . However, the disadvantages of 2D materials have also been revealed: limited synthesis methods for wafer‐scale geometry and the lack of compatibility to CMOS fabrication processes . This progress report will review the 2D materials library and state‐of‐the‐art fabrication methods.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Synaptic Devices Based on 2D Materials

Sun

Wang

Yang

2020

Advanced Intelligent Systems

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Diverse synaptic plasticity with a wide range of timescales in biological synapses plays an important role in memory, learning, and various signal processing with exceptionally low power consumption. Emulating biological synaptic functions by electric devices for neuromorphic computation has been considered as a way to overcome the traditional von Neumann architecture in which separated memory and information processing units require high power consumption for their functions. Synaptic devices are expected to conduct complex signal processing such as image classification, decision‐making, and pattern recognition in artificial neural networks. Among various materials and device architectures for synaptic devices, 2D materials and their van der Waals (vdW) heterostructures have been attracting tremendous attention from researchers based on their capacity to mimic unique synaptic plasticity for neuromorphic computing. Herein, the basic operations of biological synapses and physical properties of 2D materials are discussed, and then 2D materials and their vdW heterostructures for advanced synaptic operations with novel working mechanisms are reviewed. In particular, there is a focus on how to design synaptic devices with the vdW structures in terms of critical 2D materials and their limitations, providing insight into the emerging synaptic device systems and artificial neural networks with 2D materials.

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Integration of bulk materials with two-dimensional materials for physical coupling and applications

Cited by 227 publications

References 94 publications

Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures

Integration of two-dimensional transition metal dichalcogenides with Mie-resonant dielectric nanostructures

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Recent Progress in Synaptic Devices Based on 2D Materials

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