Integration of 2D materials on a silicon photonics platform for optoelectronics applications

Youngblood, Nathan; Li, Mo

doi:10.1515/nanoph-2016-0155

Cited by 102 publications

(99 citation statements)

References 102 publications

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“…Collectively, these new material architectures are leading to observations of fascinating phenomena such as optical switching, mixed ionic and electronic conduction, and exotic charge‐transport physics . These materials are also being integrated into new device architectures because of their mechanical flexibility, with potential applications including wearable devices or 2D‐on‐silicon integrated circuits . While recent reviews have focused on the synthesis and properties of 2D intercalation compounds, here, we present an account of how intercalation changes in 2D materials with thickness, lateral size, and stacking sequence, and we make comparisons to intercalation in bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Intercalation of Layered Materials from Bulk to 2D

et al. 2019

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Intercalation in few‐layer (2D) materials is a rapidly growing area of research to develop next‐generation energy‐storage and optoelectronic devices, including batteries, sensors, transistors, and electrically tunable displays. Identifying fundamental differences between intercalation in bulk and 2D materials will play a key role in developing functional devices. Herein, advances in few‐layer intercalation are addressed in the historical context of bulk intercalation. First, synthesis methods and structural properties are discussed, emphasizing electrochemical techniques, the mechanism of intercalation, and the formation of a solid‐electrolyte interphase. To address fundamental differences between bulk and 2D materials, scaling relationships describe how intercalation kinetics, structure, and electronic and optical properties depend on material thickness and lateral dimension. Here, diffusion rates, pseudocapacity, limits of staging, and electronic structure are compared for bulk and 2D materials. Next, the optoelectronic properties are summarized, focusing on charge transfer, conductivity, and electronic structure. For energy devices, opportunities also emerge to design van der Waals heterostructures with high capacities and excellent cycling performance. Initial studies of heterostructured electrodes are compared to state‐of‐the‐art battery materials. Finally, challenges and opportunities are presented for 2D materials in energy and optoelectronic applications, along with promising research directions in synthesis and characterization to engineer 2D materials for superior devices.

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Section: Introductionmentioning

confidence: 99%

Intercalation of Layered Materials from Bulk to 2D

et al. 2019

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“…These novel materials are in‐plane covalently bonded and out‐of‐plane connected by van der Waals forces. So the mismatch between lattice constants and thermal expansion coefficient is negligible for the fabrication of 2D photodetectors . Moreover, they are highly compatible with various substrates matching different electrical and optical requirements, including silicon and trap‐free substrates.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS₃ Nanosheet

Chu

Wang

Yin

et al. 2017

Adv Funct Materials

237

206

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2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar-blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS 3 nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few-layered 2D NiPS 3 nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10 12 Jones, outperforming some traditional widebandgap UV detectors. The wavelength-dependent photoresponsivity measurement allows the direct observation of an admirable cut-off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.

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“…High in‐plane mobility of 10 000 cm 2 V −1 s −1 reported in graphene and 100–500 cm 2 V −1 s −1 in TMDs, at room temperature, facilitates efficient photocarrier extraction and leads to fast and sensitive detectors . Another important advantage of 2D materials is the absence of surface dangling bonds due to the vdW interlayer interactions, enabling seamless integration on any substrate crystalline or amorphous, rigid, or flexible . Large area growth and easy processing of 2D materials warrant low‐cost and large‐scale manufacturability .…”

Section: Introductionmentioning

confidence: 99%

Recent Progress and Future Prospects of 2D‐Based Photodetectors

2018

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Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.

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Integration of 2D materials on a silicon photonics platform for optoelectronics applications

Cited by 102 publications

References 102 publications

Intercalation of Layered Materials from Bulk to 2D

Intercalation of Layered Materials from Bulk to 2D

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS₃ Nanosheet

Recent Progress and Future Prospects of 2D‐Based Photodetectors

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Integration of 2D materials on a silicon photonics platform for optoelectronics applications

Cited by 102 publications

References 102 publications

Intercalation of Layered Materials from Bulk to 2D

Intercalation of Layered Materials from Bulk to 2D

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

Recent Progress and Future Prospects of 2D‐Based Photodetectors

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High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS₃ Nanosheet