Integration Issues of CMP

Robinson, K.M.; Devriendt, K.; Evans, David R.

doi:10.1007/978-3-662-06234-0_10

Cited by 1 publication

(1 citation statement)

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“…Pattern density variation renders this approach nearly impossible if small isolated features and large or dense structures exist in the same die. The preferred solution today is slurries specifically formulated with extremely high selectivity to nitride [12]. Copper CMP is the last mainstream process to be considered and is arguably the most complex.…”

Section: Table 3: Output Metric Interactions With Process Recipe Sett...mentioning

confidence: 99%

Chemical Mechanical Planarization Historical Review and Future Direction

Banerjee¹,

Rhoades²

2008

ECS Trans.

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The advances in interconnection technology have played a key role in allowing continued improvements in manufacturing of an ever expanding list of semiconductor devices. Chemical Mechanical Planarization (CMP) is a key enabling technology to generate extremely flat and smooth surface at several critical steps in this manufacturing process flow. From the time CMP was first introduced two decades ago to flatten/planarize oxide inter-level dielectric layers, it has come a long way and is now used for tungsten for contacts or vias, for shallow trench isolation and for copper interconnects in dual damascene architecture. Along the way, many integration schemes now require the use of other low-k dielectric films, all of which are planarized using CMP process. In this review paper, various factors influencing CMP will be discussed. The discussion will focus on material challenges to develop consumables such as pad, slurry, post CMP cleaning solution etc. and the challenges for integrating different material stack including the cost of ownership issue. The authors will also provide some direction related to new applications under development and future potential direction.

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Section: Table 3: Output Metric Interactions With Process Recipe Sett...mentioning

confidence: 99%