In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure),and then monitored the effect on TiN etch rate and selectivity with SiO2. When the RF power, DC-bias voltage, andprocess pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing CF4 contentfrom 0 to 20 % in CF4/Ar plasma. The TiN etch rate reached maximum at 20% CF4 addition. As RF power, DC biasvoltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. Theanalysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions betweenthe surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as themain etch mechanism for TiN thin films in CF4/Ar plasma