Integrating thick copper/Black Diamond™ layer in CMOS interconnect process for RF passive components

Lihui, Guo; Zhang, Yibin; Jeffrey, Su Yong Jie

doi:10.1016/j.microrel.2003.12.006

Cited by 4 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1]- [2] and [3] Cu Cu 2+ + 2e- [1] Cu + H2O2 Cu (OH) 2 [2] Cu (OH) 2 CuO + H2O [3] Moreover, BTA contains in slurry reacts with copper to form Cu-BTA solid at the surface. [4] n Cu + + n BTA + H + (Cu-BTA) n [4] Using standard slurry, oxide copper and Cu-BTA are formed according to the potential -pH diagram for Cu-BTA water system (figure 2).…”

Section: Chemical Rolementioning

confidence: 99%

See 1 more Smart Citation

Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology

et al. 2007

View full text Add to dashboard Cite

The emergence of wireless communication technologies has increased the need for high performance radio frequency (RF) circuits as transceivers or filters (1). These functions imply high quality factor (Q) inductors. One way to reach such high Q value is to increase the ultimate copper thickness (above 3µm). Whereas Cu CMP has been widely reported as one of the leading techniques to integrate copper interconnects, many issues are still encountered for thick copper applications, where uniformity, topology and process time are major concerns. In this study, we develop a copper bulk CMP process compatible for both thick copper/low k interconnects and RF application. Starting from conventional sub-0.18µm slurry, an additive solution is added to enhance its removal rate. Results obtained on a 4 µm thick level are presented. It is shown that electrical performances are preserved, notably sheet resistance uniformity. Other usual CMP param eters, like planarization and consumables aging are also presented.

show abstract

Section: Chemical Rolementioning

confidence: 99%

“…This complexe mechanism (process B) increases more copper removal rate than passivation mechanism (process A). ( Using too much acid moves to low pH region (pH<2) where copper is dissolved (1). As dissolved forms are less protective for copper, corrosion can be observed.…”

Section: Chemical Rolementioning

confidence: 99%

Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology

et al. 2007

View full text Add to dashboard Cite

show abstract

“…The emergence of wireless communication technologies has increased the need for high performance RF circuits as transceivers or filters [1]. These functions imply high Q RF self.…”

mentioning

confidence: 99%

Chemical-Mechanical Planarization Compatible for Both Copper/Low K Level in a 90 nm Technology and Thick Copper Level in an RF Technology

Perrot,

Loquet,

Bouillon

2006

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

et al. 2012

View full text Add to dashboard Cite

Integrating thick copper/Black Diamond™ layer in CMOS interconnect process for RF passive components

Cited by 4 publications

References 6 publications

Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology

Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology

Chemical-Mechanical Planarization Compatible for Both Copper/Low K Level in a 90 nm Technology and Thick Copper Level in an RF Technology

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

Contact Info

Product

Resources

About