2007
DOI: 10.1063/1.2741052
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Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency

Abstract: Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni∕Au p-metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnO∕GaN multilayer.

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Cited by 146 publications
(98 citation statements)
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“…Based on these results, and combined with its transparency over the visible region as well as the ability to be grown into a variety of nanostructures, it is hoped that the ZnO NRA can be further tailored to improve the out-coupling of light from the emissive organic layers [50][51][52] .…”
Section: Resultsmentioning
confidence: 99%
“…Based on these results, and combined with its transparency over the visible region as well as the ability to be grown into a variety of nanostructures, it is hoped that the ZnO NRA can be further tailored to improve the out-coupling of light from the emissive organic layers [50][51][52] .…”
Section: Resultsmentioning
confidence: 99%
“…Extensive efforts have been made to tackle this problem, such as roughening the emitting surface of the thin film [404,405], reshaping the geometry of the LED architecture [406,407], utilizing a resonant cavity [408], coupling with surface plasmons [409], fabricating photonic crystal structures [410,411], and using corrugated Bragg gratings [412]. Nanowire/ thin film heterostructures have been proposed to be a promising solution, considering the waveguiding properties of the nanowires that should enhance light extraction efficiency of the LED's [9,[413][414][415][416][417][418].…”
Section: Light Extractionmentioning
confidence: 99%
“…Such adverse effects undesirably lower the current injection efficiency and/or internal quantum efficiency of the integrated devices, although the light extraction efficiency is increased. On the other hand, ZnO nanorod arrays formed by the hydrothermal synthesis led to only 70% LEE improvement in comparison to the conventional LEDs [10]. This was unfortunately lower than that of the MOCVD-grown ZnO NRAs.…”
Section: Introductionmentioning
confidence: 82%
“…For surface roughening, a common technique is based on photo-electrochemical etching [7]. Recently, remarkable investigations on the LEE of GaN-based LEDs have also been reported employing ZnO nanostructures [8][9][10][11][12]. Using ZnO can effectively reduce the internal reflection due to the fact that the refractive index of ZnO is about 2, which is close to but smaller than that of GaN (n = 2.5).…”
Section: Introductionmentioning
confidence: 99%
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