Integrated SOA-PIN Detector for High-Speed Short Reach Applications

Caillaud, Christophe; Chanclou, Philippe; Blache, F.; Angelini, Philippe; Duval, B.; Charbonnier, P.; Lanteri, Delphine; Glastre, G.; Achouche, M.

doi:10.1109/jlt.2015.2389533

Cited by 29 publications

(18 citation statements)

References 12 publications

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“…The results are for data rates of 10, 25 and 40 Gb/s. Other high speed detector systems (other symbols, using identical color scheme for the different bit-rates), such as InAlAs APDs [23], [24], Ge/Si APD [25], and SOA-PIN combinations [26]- [28] are included for comparison.…”

Section: Sensitivity At Different Avalanche Widths and Bit Ratesmentioning

confidence: 99%

Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

Shulyak

Hayat

2020

J. Lightwave Technol.

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Sensitivity of high-speed optical receivers is heavily influenced by the performance of the optical detectors used in the receivers, the data rate, and the target bit-error-rate (BER). A simulation model for sensitivity of optical receivers based on electron-avalanche photodiodes (e-APDs) is presented. It allows for the optimization of avalanche width and operating voltage to achieve the optimum receiver sensitivity for given bit rate and target BER. The effects modelled include inter-symbol interference (ISI), various dark current components (tunnelling, diffusion, and generation), current impulse duration, avalanche gain, and amplifier's noise. The model was demonstrated through simulations of Indium Arsenide (InAs) e-APDs. For 10 −12 target BER, the receiver's sensitivities were found to be −30.6, −22.7, −19.2, and −16.6 dBm, for 10, 25, 40, and 50 Gb/s data rate, respectively. Desirable avalanche properties of InAs e-APDs are counteracted by detrimental effects of high dark currents. Hence InAs e-APDs with lower dark currents are required to be more competitive with other optical detector technologies for high-speed optical receivers. The data reported in this article is available from the ORDA digital repository (

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Section: Sensitivity At Different Avalanche Widths and Bit Ratesmentioning

confidence: 99%

Sensitivity Calculations of High-Speed Optical Receivers Based on Electron-APDs

Shulyak

Hayat

2020

J. Lightwave Technol.

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“…In the experiment, because APDs with high bandwidth are not yet commercially available for 50 Gb/s, we could use a semiconductor optical amplifier (SOA) with a PIN receiver at the ONU for this wavelength range. The compact size and integrability of the SOA [10] makes it a suitable candidate for the use as optical preamplifiers in ONU. The proposed downstream scheme reduces the downstream channel bandwidth requirement to ∼15 GHz.…”

Section: Proposed High Serial Rate Tdm-ponmentioning

confidence: 99%

An Asymmetric High Serial Rate TDM-PON With Single Carrier 25 Gb/s Upstream and 50 Gb/s Downstream

Yin

Kerrebrouck

Verbist

et al. 2016

J. Lightwave Technol.

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“…The ONU can also be reflective, i.e., the colorless ONU equipped with Semiconductor Optical Amplifier (SOA) and MZM, which reduces the system cost. If the above method is still unfeasible commercially, the photonic integration may be another possible solution [41].…”

Section: ) Physical-layer Improvement Mechanism Of Fo-pnmentioning

confidence: 99%