Integrated perovskite lasers on a silicon nitride waveguide platform by cost-effective high throughput fabrication

Cegielski, Piotr; Neutzner, Stefanie; Porschatis, Caroline; Lerch, Holger; Bolten, Jens; Suckow, Stephan; Kandada, Ajay Ram Srimath; Chmielak, Bartos; Petrozza, Annamaria; Wahlbrink, T.; Giesecke, Anna Lena

doi:10.1364/oe.25.013199

Cited by 57 publications

(61 citation statements)

References 32 publications

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“…Most of the following work on perovskite thin films concentrated on the workhorse composition for solar cells, methylammonium (CH 3 NH 3 /MA) lead (Pb) triiodide (I 3 ) that emits around 790 nm. Random lasers [18], whispering gallery mode lasers [19][20][21][22], distributed feedback lasers [23][24][25], vertical cavity lasers [26,27] and photonic crystals lasers have been demonstrated using this CH 3 NH 3 PbI 3 composition [28,29].…”

Section: Introductionmentioning

confidence: 99%

Triple cation mixed-halide perovskites for tunable lasers

Brenner¹,

Glöckler²,

Rueda-Delgado³

et al. 2017

Opt. Mater. Express

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Metal halide perovskites are recently attracting strong attention due to their potential in solar cells, LEDs, and lasers. Here, we demonstrate the broad spectral tuning of the optical gain characteristics of triple cation (containing methylammonium, formamidinium and cesium) mixed-halide perovskite thin films. We explicitly study the interrelation between amplified spontaneous emission (ASE) thresholds, the operational stability of the gain, and the material composition. The incorporation of cesium and a deficiency of lead in the precursor solutions is found to be crucial for low ASE thresholds and the improved stability of mixed-halide perovskites. We tune the photoluminescence in mixed-halide perovskites between peak wavelengths of 510 and 790 nm by exchanging the halide from iodide to bromide and chloride in small steps of 10%, while preserving the narrowband emission below a linewidth of 130 meV for all mixtures. The optical gain under ns-excitation can be tuned over a significant portion of this spectral window; we observe ASE emission in regions between 545 to 555 nm and 680 to 810 nm. This is a significant step towards perovskite lasers operating through a broad portion of the visible to near infrared spectrum. References and links1. S. Kazim, M. K. Nazeeruddin, M. Grätzel, and S. Ahmad, "Perovskite as Light Harvester: A Game Changer in Photovoltaics," Angew. Chem. Int. Ed. Engl. 53(11), 2812-2824 (2014). 2. S. D. Stranks and H. J. Snaith, "Metal-halide perovskites for photovoltaic and light-emitting devices," Nat.Nanotechnol. 10(5), 391-402 (2015). Tress, A. Abate, A. Hagfeldt, and M. Grätzel, "Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency," Energy Environ. Sci. 9(6), 1989-1997 (2016

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Section: Introductionmentioning

confidence: 99%

Triple cation mixed-halide perovskites for tunable lasers

Brenner¹,

Glöckler²,

Rueda-Delgado³

et al. 2017

Opt. Mater. Express

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“…Due to their promising electronic and optical properties, tremendous progress has been made in the performance of perovskites solar cells. [6,7] Such films have been incorporated into a variety of optical cavities, including whispering gallery mode cavities, [5,[8][9][10] vertical cavities, [4,11] distributed feedback (DFB) cavities, [12][13][14][15][16] and photonic crystal cavities. [3][4][5] Simple, solution-based fabrication of perovskites allows the fabrication of thin films, which exhibits optical gain within a wide spectral range.…”

Section: Introductionmentioning

confidence: 99%

Micro Lasers by Scalable Lithography of Metal‐Halide Perovskites

Bar‐On

Brenner

Lemmer

et al. 2018

Adv Materials Technologies

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description of the efforts on developing perovskite lasers is given in recent review articles. [19][20][21][22] As the field advances, new approaches for patterning perovskite films are becoming essential. More specifically, a lithographic approach that can define desired perovskite patterns is highly needed in order to utilize these materials for the realization of integrated perovskite photonic devices. Generally speaking, effective lithographic patterning requires three main capabilities. First, the ability to cover the material (in our case perovskites) with a layer of resist and pattern it with sub-micrometer resolution using a scalable process. Second, employment of the patterned resist as an etch mask for complete removal of the unprotected perovskite film. Third, removal of the residual resist mask from the perovskite film. Since metal halide perovskites are unstable soluble materials that are sensitive to a variety of solvents and gases, [23] accomplishing all of the above steps without damaging the film is highly challenging. During the past few years, several attempts have been made in order to address this challenge. Lyashenko et al. [24] demonstrated the ability to pattern perovskites using photolithography followed by SF 6 etching. This approach was utilized to define patterns in photoresists on top of methyl-ammonium lead iodide (MAPbI 3 ) films but was limited to micrometer scale features due to diffraction effects in photolithography. In addition, the chemical reaction that was used in order to etch the material only modified the exposed areas chemically (converting the material to PbF 2 ) and did not remove the perovskite layer completely as desired from a proper etching technique. Zhang et al. [25] demonstrated a different approach where PMMA layers were deposited on top of a MAPbBr 3 film and patterned using electron beam lithography (EBL) followed by dry Cl etching. Although this method can potentially generate sub-micrometer features, it is based on a serial patterning technique (EBL) and is thus limited in terms of speed and cost. In addition, the scanning electron microscopy (SEM) images of the patterned surface suggest that the etching process left a residual layer on the surface (possibly PbCl 2 ) and was unable to remove the perovskite completely. A slightly different approach to pattern perovskite films, involving lift-off instead of etching, was recently successfully demonstrated. [26] However, this technique necessitates the evaporation of perovskite films and is not compatible with the standard spin-coating film preparation method which is simple, inexpensive, and renders these materials A complete lithographic scheme for thin metal halide perovskite films is demonstrated and utilized for the realization of perovskite micro lasers. The process consists of nanoimprint lithography followed by ion beam milling. It is simple, fast, scalable, and exhibits sub-micrometer resolution. The optical properties of the perovskite films are obtained by employing analytical tools as well as by cha...

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“…Recently, inductively coupled plasma chemical vapor deposition (ICP-CVD) technique has been developed to deposit SiN x film under ultra-low temperature [25][26][27]. In our previous work, we have reported that a high quality SiN x film with thickness up to 2 μm can be achieved in a single growth process under ultra-low temperature circumstance [27], which shows great potential for active passive hybrid photonic integration [28,29].…”

Section: Introductionmentioning

confidence: 99%

Hybrid light-emitting polymer/SiN_x platform for photonic integration

Fan

Chen

et al. 2017

Opt. Express

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Organic semiconductors have potentials for a broad range of applications. However, they are difficult to be integrated with traditional inorganic material to meet the need of further applications. Based on low-temperature silicon nitride (SiN x ) deposition technique, here we demonstrate a hybrid structure fabricated by directly depositing highquality SiN x on organic polymer film Poly[2-(2',5′-bis(2"-ethylhexyloxy)-phenyl) −1,4-phenylene vinylene] (BEHP-PPV). Stacked BEHP-PPV/SiN x hybrid structures with different periods are obtained and their optical properties are systematically characterized. Moreover, a group of BEHP-PPV embedded SiN x micro-disks are fabricated and amplification of spontaneous emission (ASE) is observed under optical pumping, further confirming that BEHP-PPV remains stable after the whole fabrication process. Our technique offers a platform to fabricate organic/inorganic hybrid optical devices compatible with integrated components.

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Integrated perovskite lasers on a silicon nitride waveguide platform by cost-effective high throughput fabrication

Cited by 57 publications

References 32 publications

Triple cation mixed-halide perovskites for tunable lasers

Triple cation mixed-halide perovskites for tunable lasers

Micro Lasers by Scalable Lithography of Metal‐Halide Perovskites

Hybrid light-emitting polymer/SiN_x platform for photonic integration

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