2016
DOI: 10.7567/apex.9.052204
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Integrated p–n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities

Abstract: We propose, fabricate, and demonstrate integrated p–n junction InGaN/GaN multiple-quantum-well devices with diverse functionalities on a GaN-on-silicon platform. Suspended devices with a common n-contact are realized using a wafer-level process. For the integrated devices, part of the light emitted by a light-emitting diode (LED) is guided in-plane through a suspended waveguide and is sensed by another photodiode. The induced photocurrent is tuned by the LED. The integrated devices can act as two independent L… Show more

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Cited by 29 publications
(10 citation statements)
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“…As shown in Fig. 2(d), three 100-µm-long and 6-µm-wide suspended waveguides impinge on the collector, which is optically coupled with the emitter [17]. For simplicity, in our case, the proposed device has similar waveguide and emitter architectures.…”
Section: Resultsmentioning
confidence: 99%
“…As shown in Fig. 2(d), three 100-µm-long and 6-µm-wide suspended waveguides impinge on the collector, which is optically coupled with the emitter [17]. For simplicity, in our case, the proposed device has similar waveguide and emitter architectures.…”
Section: Resultsmentioning
confidence: 99%
“…Such devices can function as the transmitters to emit visible light signals, and as receivers to analyze incoming UV signals for bi-directional optical wireless communication applications. By joining a forward biased LED, a suspended waveguide, and a reverse biased PD together, an integrated p-i-n junction device sharing the same InGaN/GaN MQW active region has been demonstrated on GaN-on-silicon platform [70]. Apart from the planar structures, Tchernycheva et al reported a nanowire photonic platform consisting of InGaN core-shell nanowire LEDs and PDs optically coupled by SiN waveguides [71].…”
Section: Integrated Photonics At Visible Color Regimementioning
confidence: 99%
“…The responsivity of the InGaN-based WPD increases from 18 mA/W to 51 mA/W with increasing reverse bias voltage from 0 V to 10 V [91]. Since WPD and LD are sharing the same active layer design without the need of epitaxial regrowth, the semipolar InGaN-based WPD outperforms other QW PDs grown on polar c-plane substrates for simultaneous light emission and detection [93][94][95][96]. In summary, multi-section InGaN-based LDs on semipolar GaN substrates show promising performance for photonics integration at the visible wavelength regime.…”
Section: Devices In Laser-based Vlc Systemsmentioning
confidence: 99%