“…Some of the other papers attempt to calculate or scale R ds,ON based on some device-level characteristics or operational characteristics of the MOSFET. In [37], R ds,ON is obtained from the datasheet, from rise time and fall time obtained from datasheet [41,44,50] switching energy is scaled with voltage and current [95] capacitance values scaled with length and width of MOSFET die [73,90,91] capacitance values from width of MOSFET die [27] capacitance values calculated from chip area [23, 33-37, 39, 62, 63] empirical equation for soft-switched converters [97] model for a series-parallel resonant converter R ds,ON is scaled with junction temperature [72] R ds,ON is scaled with rated voltage [27] R ds,ON from MOSFET chip area [73,90] R ds,ON from MOSFET die width [91] R ds,ON from MOSFET die width and applied gate voltage [39,41] R ds,ON from junction temperature and current extracted from datasheet but is scaled with junction temperature of the MOSFET. In [52], R ds,ON is scaled with maximum blocking voltage of MOSFET.…”