2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551)
DOI: 10.1109/pesc.2004.1354791
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Integrated method for optimization of power electronic circuits

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Cited by 17 publications
(8 citation statements)
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“…where ΔB is the peak-to-peak flux density and K 1 is chosen to be consistent with the basic Steinmetz (2) for sinusoidal waveforms. In [41][42][43][44], another form of modified Steinmetz equation, which is introduced by Albach et al [45] was used. An equivalent frequency is derived for the arbitrary waveform to be used with the basic equation and the effects of temperature are also considered.…”
Section: Modifications To Steinmetz Equationmentioning
confidence: 99%
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“…where ΔB is the peak-to-peak flux density and K 1 is chosen to be consistent with the basic Steinmetz (2) for sinusoidal waveforms. In [41][42][43][44], another form of modified Steinmetz equation, which is introduced by Albach et al [45] was used. An equivalent frequency is derived for the arbitrary waveform to be used with the basic equation and the effects of temperature are also considered.…”
Section: Modifications To Steinmetz Equationmentioning
confidence: 99%
“…Some of the other papers attempt to calculate or scale R ds,ON based on some device-level characteristics or operational characteristics of the MOSFET. In [37], R ds,ON is obtained from the datasheet, from rise time and fall time obtained from datasheet [41,44,50] switching energy is scaled with voltage and current [95] capacitance values scaled with length and width of MOSFET die [73,90,91] capacitance values from width of MOSFET die [27] capacitance values calculated from chip area [23, 33-37, 39, 62, 63] empirical equation for soft-switched converters [97] model for a series-parallel resonant converter R ds,ON is scaled with junction temperature [72] R ds,ON is scaled with rated voltage [27] R ds,ON from MOSFET chip area [73,90] R ds,ON from MOSFET die width [91] R ds,ON from MOSFET die width and applied gate voltage [39,41] R ds,ON from junction temperature and current extracted from datasheet but is scaled with junction temperature of the MOSFET. In [52], R ds,ON is scaled with maximum blocking voltage of MOSFET.…”
Section: Mosfet Lossesmentioning
confidence: 99%
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“…Very often integration of two or more simulation environments is necessary to model all system phenomena (like thermal behaviour, electrical behaviour, geometrical placement of elements, etc.) [16], [17]. …”
Section: A Model Of a Considered Systemmentioning
confidence: 99%