Integrated Laser Attach Technology on a Monolithic Silicon Photonics Platform

Bian, Yusheng; Ramachandran, Koushik; Peng, Bo; Hedrick, Brittany; Mills, Scott; Donegan, Keith; Esopi, Monica R.; Hirokawa, Takako; Jacob, Ajey; Karra, Vaishnavi; Yasar, Firat; Fasano, Benjamin; Şahin, Asli; Houghton, Thomas; Nummy, Karen; Rundquist, Armand; Vail, Ed; Ding, Hanyi; Dezfulian, Kevin; Wu, Zhuo-Jie; Fisher, Daniel; Pape, Jim; Steffes, Jay; Medina, Louis; Roy, Subharup Gupta; Cox, Harry; Green, Bart N.; Lubguban, Jorge; Chowdhury, Asif; Lee, Won Suk; Aboketaf, Abdelsalam; Rakowski, Michal; McLean, Kate; Sowinski, Zoey; Kwou, Oh-Jung; Robert, Gabrielle; Sorbara, Massimo; Krishnamurthy, S.; Stricker, Andy; Cho, Jae Kyu; Melville, Ian; Riggs, Dave; Augur, Rod; Robson, N.; Berger, Daniel; Lee, Luke P.; Gupta, Vikas; Yu, Anthony W.; Giewont, Ken; Letavic, T.; Pellerin, John

doi:10.1109/ectc32696.2021.00048

Cited by 7 publications

(2 citation statements)

References 30 publications

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“…In this field, several noteworthy reviews were published in the past [35][36][37][38]. Here, we conduct the review based on the methods for integrating III-V materials on Si substrates [39,40], including flip-chip integration [41,42], heterogeneous integration, monolithic integration, and transfer printing techniques [43,44].…”

Section: Iii-v-material-based Lasersmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review.

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Section: Iii-v-material-based Lasersmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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“…It mainly refers to the design and fabrication of the laser by mounting individual prefabricated and optimised components (such as MRR, MZI, filters, etc.) on the substrate using bonding techniques (for example chip mounting, lead bonding, flip-flop bonding) and then coupling the laser into the waveguide [14][15][16]. For GCs and planar optical waveguides, mode matching is also achieved via SSC alignment coupling.…”

Section: Principle Of Integrated External Cavity Tunable Diode Lasersmentioning

confidence: 99%

Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers

Zhang,

Li,

Luo

et al. 2023

Photonics

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The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules.

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Advances and Reliability Challenges in Heterogeneous Integration in Chiplet ERA: From Solder to Copper to Optical Interconnects

Wu,

2024

2024 Conference of Science and Technology for Integrated Circuits (CSTIC)

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Integrated Laser Attach Technology on a Monolithic Silicon Photonics Platform

Cited by 7 publications

References 30 publications

On-Chip Lasers for Silicon Photonics

On-Chip Lasers for Silicon Photonics

Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers

Advances and Reliability Challenges in Heterogeneous Integration in Chiplet ERA: From Solder to Copper to Optical Interconnects

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